Light emitting apparatus

ABSTRACT

Provided is a light emitting apparatus including a substrate including a plurality of light emitting devices, wherein the substrate further includes a plurality of first members configured to diffuse light emitted from at least one of the light emitting devices, and a second member that is positioned between the first members, wherein the second member includes a light absorbing layer.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 15/984,903, filed on May 21, 2018, which application is acontinuation of U.S. patent application Ser. No. 15/352,776, filed onNov. 16, 2016, issued as U.S. Pat. No. 10,020,467 on Jul. 10, 2018,which application is a continuation of U.S. patent application Ser. No.14/312,115, filed on Jun. 23, 2014, issued as U.S. Pat. No. 9,515,291 onDec. 6, 2016, which application claims priority to Japanese PriorityPatent Application JP 2013-142039 filed in the Japan Patent Office onJul. 5, 2013, the entire content of which is hereby incorporated byreference.

BACKGROUND

The present disclosure relates to a light emitting apparatus,specifically to a light emitting apparatus including a light emittingdevice.

Recently, lighting systems and organic electronic luminescence lightemitting apparatuses (hereinafter, simply referred to as an organic ELlight emitting apparatuses) that use organic electronic luminescencedevice (hereinafter, simply referred to as an organic EL device) aslight emitting devices have come into wide use. Subsequently, for theorganic EL light emitting apparatus, a technique of efficiently emittinglight has to be developed. If light extraction efficiency is poor, itmeans that an actually generated amount of light from the organic ELdevice is not effectively utilized, and a great loss occurs in theelectric power consumption and the like.

In order to enhance the light extraction efficiency, an organic EL lightemitting apparatus having a reflector (reflecting mechanism) isdisclosed, for example, in Japanese Unexamined Patent ApplicationPublication No. 2004-177481. In the organic EL light emitting apparatus,light that is emitted to the front side from a light emitting layerpasses through a transparent layer. Here, light at a large angle fromamong light emitted to the front side is reflected by a reflector(reflecting mechanism) provided in the transparent layer and emitted tothe outside. In addition, in the organic EL light emitting apparatusdisclosed in the patent application publication, a low-reflection layerfor preventing external light from being reflected is provided on theopposite side of the transparent layer to the light emitting layer.

SUMMARY

Here, there are non-luminous regions between light emitting regions thatactually emit light in a general organic EL light emitting apparatus. Inaddition, the ratio of the non-luminous regions to the entire area ofthe luminous regions and the non-luminous regions is 0.5 or more, insome cases. Accordingly, if the external light is reflected on thenon-luminous region and emitted from the organic EL light emittingapparatus, a decrease in contrast is caused.

Accordingly, it is desirable to provide a light emitting apparatushaving the configurations and structures in which it is difficult forthe external light to be reflected in the non-luminous region.

According to an embodiment of the present disclosure, there is provideda light emitting apparatus including a substrate including a pluralityof light emitting devices, wherein the substrate further includes aplurality of first members configured to diffuse light emitted from atleast one of the light emitting devices, and a second member that ispositioned between the first members, and wherein the second memberincludes a light absorbing layer.

According to an embodiment, the light absorbing layer is in proximity ofan outside portion of the second member.

According to an embodiment, there is provided an electronic apparatusincluding a light emitting apparatus including a substrate, thesubstrate including a plurality of light emitting devices, wherein thesubstrate further includes a plurality of first members and a secondmember positioned between the first members, wherein the first membersare configured to diffuse and emit light, and wherein the second memberincludes a light absorbing layer.

According to an embodiment of the present disclosure, the electronicapparatus includes a mobile device.

According to an embodiment of the present disclosure, the mobile deviceis a tablet or a smartphone.

According to an embodiment of the present disclosure, there is provideda light emitting apparatus, including (A) a first substrate thatincludes a plurality of light emitting devices each obtained by stackinga first electrode, a light emitting unit configured with an organiclayer including a light emitting layer, and a second electrode; and (B)a second substrate that faces the first substrate, in which the firstsubstrate includes a first member that diffuses light from each lightemitting device and emits the light to the outside, and a second memberthat occupies portions between the first members, and a light absorbinglayer is provided in the second member.

According to the light emitting apparatus of the present disclosure, thefirst substrate includes first members that diffuse light from eachlight emitting device and emit the light to the outside and secondmembers that occupy portions between the first members, and a lightabsorbing layer is provided in the second members. Therefore, since theexternal light that enters the second member is absorbed by the lightabsorbing layer, it is difficult for the light to be emitted from thelight emitting apparatus to the outside. Accordingly, the contrast ofthe light emitting apparatus can be increased. Further, the advantagesdescribed in the present specification are merely examples and are notintended to limit the present disclosure. In addition, additionaladvantages may be provided.

Additional features and advantages are described herein, and will beapparent from the following Detailed Description and the figures.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 1;

FIG. 2 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 2;

FIG. 3 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 3;

FIG. 4 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 4;

FIG. 5 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 5;

FIG. 6 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 6;

FIG. 7 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 7;

FIG. 8 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 8;

FIG. 9 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 9;

FIG. 10 is a schematic partial cross-sectional view of a light emittingapparatus according to Example 10;

FIG. 11 is a partial plan view of the light emitting apparatus accordingto Example 10;

FIG. 12 is a schematic diagram of an organic layer and the like of alight emitting device that configures the light emitting apparatusaccording to Example 1;

FIGS. 13A and 13B are schematic diagrams illustrating an array ofsub-pixels in the light emitting apparatus according to Examples 1 to10, respectively;

FIG. 14 is a schematic diagram illustrating an array of the sub-pixelsin the light emitting apparatus according to Examples 1 to 10;

FIGS. 15A, 15B, and 15C are schematic partial cross-sectional views of afirst substrate and the like for describing a method of manufacturingthe light emitting apparatus according to Example 1;

FIGS. 16A and 16B are schematic partial cross-sectional views of thefirst substrate and the like for describing a method of manufacturingthe light emitting apparatus according to Example 1, subsequently toFIG. 15C;

FIG. 17 is a schematic partial cross-sectional view of the firstsubstrate and the like for describing a method of manufacturing thelight emitting apparatus according to Example 1, subsequently to FIG.16B;

FIGS. 18A, 18B, 18C, and 18D are schematic partial cross-sectional viewsof a glass substrate and the like for describing an overview of anothermethod of manufacturing the light emitting apparatus according toExample 6;

FIGS. 19A, 19B, 19C, and 19D are schematic partial cross-sectional viewsof a glass substrate and the like for describing an overview of anothermethod of manufacturing the light emitting apparatus according toExample 10;

FIGS. 20A, 20B, and 20C are graphs illustrating simulation results oflight amounts of reflective light, and reflectivity of external lightand light amounts of reflective light in the light emitting apparatusaccording to Example 5; and

FIG. 21 is a graph illustrating a simulation result of a relationshipbetween viewing angles and brightness in the light emitting apparatusaccording to Example 5.

DETAILED DESCRIPTION

Hereinafter, with reference to the drawings, the present disclosure willbe described based on examples, but the present disclosure is notlimited to the examples and various numerical values and materialsaccording to the examples are given as examples. Further, thedescription is given in the order as described below.

The present disclosure relates to a light emitting apparatus. It shouldbe understood by those skilled in the art that the light emittingapparatus can be utilized in a number of suitable applicationsincluding, for example, a display including a display for an electronicapparatus, wherein the electronic apparatus includes a mobile device andthe like, such as a tablet, a smartphone, and the like, and wherein thelight emitting apparatus can be configured to be a part of theelectronic apparatus in any suitable manner such that the electronicapparatus can function in any suitable manner.

1. Light emitting apparatus of the present disclosure, Generaldescription

2. Example 1 (Light emitting apparatus of the present disclosure, Lightemitting apparatus according to first and second embodiments of thepresent disclosure)

3. Example 2 (Modification of Example 1)

4. Example 3 (Another modification of Example 1)

5. Example 4 (Still another modification of Example 1)

6. Example 5 (Still another modification of Example 1)

7. Example 6 (Still another modification of Example 1; Light emittingapparatus according to first and third embodiments)

8. Example 7 (Modification of Example 6)

9. Example 8 (Another modification of Example 6)

10. Example 9 (Still another modification of Example 6)

11. Example 10 (Still another modification of Example 1; Light emittingapparatus according to first and fourth embodiments of the presentdisclosure), and the like

Light Emitting Apparatus of the Present Disclosure, General Description

The light emitting apparatus of the present disclosure may have aconfiguration in which at least a portion of light diffused in a firstmember is reflected on an interface between the first member and asecond member. Further, a light emitting apparatus configured as aboveis referred to as a “light emitting apparatus according to a firstembodiment of the present disclosure”, for convenience.

Otherwise, the light emitting apparatus of the present disclosure mayhave a configuration in which a light reflecting film is formed at theinterface between the first member and the second member. Further, alight emitting apparatus configured as above is referred to as a “lightemitting apparatus according to a second embodiment of the presentdisclosure”, for convenience. In the light emitting apparatus accordingto the second embodiment of the present disclosure, the light diffusedin the first member is partially or totally reflected depending on thematerial configuring the light reflecting film.

Otherwise, the light emitting apparatus of the present disclosure mayhave a configuration in which

1.1≤n ₁≤1.8 and preferably

1.2≤n ₁≤1.6 are satisfied, and

n ₁ −n _(2-ave)≥0.2 and preferably

n ₁ −n _(2-ave)≥0.3

are satisfied, when a refractive index of a material configuring thefirst member is n₁, and an average refractive index of a materialconfiguring the second member that includes the light absorbing layer isn_(2-ave). Further, a light emitting apparatus configured as above isreferred to as a “light emitting apparatus according to a thirdembodiment of the present disclosure”, for convenience. In addition,when the refractive index of a material configuring the second memberexcept for the light absorbing layer is n₂, and the refractive index ofa material configuring the light absorbing layer is n₂′, it ispreferable that

n ₁ −n ₂≥0.2

and preferably

n ₁ −n ₂≥0.3

are satisfied, and

n ₁ −n ₂′≥0.2

and preferably

n ₁ −n ₂′≥0.3

are satisfied.

In this manner, since the refractive index n₁ and difference between therefractive index n₁ and the average refractive index n_(2-ave) areregulated in the light emitting apparatus according to the thirdembodiment of the present disclosure, even if a light reflecting memberor the like is not provided at the interface between the first memberand the second member, the light extraction efficiency of the light fromthe light emitting device to the outside can be further increased.

The light emitting apparatus according to the third embodiment of thepresent disclosure may have a configuration in which a second electrodeis formed between the first member and the second member or an organiclayer and a second electrode is formed between the first member and thesecond member. In this case, at least a portion of light diffused in thefirst member is reflected at the interface between the second member andthe second electrode, or between the second member and the organiclayer. However, these configurations are also included in aconfiguration in which “at least a portion of light diffused in thefirst member is reflected on the interface between the first member andthe second member”.

The light emitting apparatus according to the second embodiment of thepresent disclosure and the light emitting apparatus according to thethird embodiment of the present disclosure can be manufactured based oneach step of:

forming an interlayer insulating layer on a first substrate and forminga first electrode on the interlayer insulating layer;

obtaining a second member in which an inclined plane of an opening isinclined by forming a second member forming layer (including a lightabsorbing layer) on the first electrode and the interlayer insulatinglayer and selectively removing the second member forming layer on thefirst electrode;

forming an organic layer and a second electrode from the first electrodeexposed at the lower portion of the opening to the inclined plane of theopening, and subsequently, in the light emitting apparatus according tothe second embodiment of the present disclosure, forming a lightreflecting film on the inclined plane of the opening; and

forming a first member on the second electrode, or each step of:

preparing a stamper having a shape complementary to the first member;

applying a resin material on a supporting substrate;

obtaining a resin material layer having convex portions by shaping theresin material using the stamper and removing the stamper;

planarizing top portions of the convex portions of the resin materiallayer, and subsequently, in the light emitting apparatus of the secondembodiment of the present disclosure, forming the light reflecting filmon the convex portions, and then embedding an adhesive agent layer inportions between convex portions of the resin material layer; and

removing a resin material layer from the supporting substrate, bondingthe adhesive agent layer to the first substrate and obtaining a secondmember (including a light absorbing layer) made with the adhesive agentlayer and a first member made with the resin material layer.

In the method of manufacturing the light emitting apparatus, since thefirst member can be directly formed on the second electrode, there is noloss in extracting light emitted from a light emitting device which iscaused by the existence of an adhesive layer between the secondelectrode and a reflector. Otherwise, the first member made with theresin material layer and the second member made with the adhesive agentlayer can be obtained by using the stamper. Accordingly, the organic ELlight emitting apparatus in which the light extraction efficiency oflight from the light emitting device to the outside can be furtherincreased can be manufactured with a simple manufacturing method.

Otherwise, the light emitting apparatus of the present disclosure mayhave a configuration in which the light reflecting member that reflectsat least a portion of light being emitted from the light emittingdevice, passing through the first member, and entering the secondsubstrate from the first surface of the second substrate, and that emitsthe light from the second surface of the second substrate is formed onthe second substrate. Further, a light emitting apparatus configured asabove is referred to as a “light emitting apparatus according to afourth embodiment of the present disclosure”, for convenience. Though itdepends on configuring materials, the second substrate provided with alight reflecting member can be manufactured, for example, by a method offorming concave portions on a first surface using a stamper or formingconcave portions on a first surface based on a cutting process, forminga light reflecting member on a surface exposed to the concave portions,and then embedding the concave portions.

The light reflecting film of the light emitting apparatus according tothe second embodiment of the present disclosure, the surface (or aninterface between the first member and the second member) of the secondmember that faces the first member of the light emitting apparatusaccording to the third embodiment of the present disclosure, and thelight reflecting member of the light emitting apparatus according to thefourth embodiment of the present disclosure are collectively referred toas a “light reflecting portion” or a “reflector” for convenience.

The light emitting apparatus of the present disclosure having variouspreferred configurations described above further includes:

a protecting film and a sealing material layer on the first member andthe second member, in which

|n ₃ −n ₄|≤0.3

and preferably

|n ₃ −n ₄|≤0.2

can be satisfied, when a refractive index of a material configuring theprotecting film is n₃, and a refractive index of a material configuringthe sealing material layer is n₄. According to this, light can beeffectively prevented from being reflected or diffused on the interfacebetween the protecting film and the sealing material layer. Further, itmay be configured so that the first member and the protecting film areintegrated by forming the first member and the protecting film at thesame time. In addition, the following upper surface light emitting-typelight emitting apparatus having preferred configurations as above may beconfigured so that when the light amount of the light from the centerportion of the light emitting device is set to be 1, the light amount ofthe light emitted from the light emitting device to the outside throughthe first member and the second substrate is 1.5 to 2.0.

As described above, the light absorbing layer is provided in the secondmember in the light emitting apparatus of the present disclosure, butspecifically, in the light emitting apparatus of the present disclosurewhich has preferred configurations described above, the second membermay be configured to have a structure in which the light absorbing layerand other layers (referred to as a “second member configuring layer”,for convenience) are stacked, or the second member may be configured tohave the light absorbing layer (that is, the light absorbing layeroccupies the entire portion of the second member). Subsequently, in theformer structure, the light absorbing layer can be provided in the lowerportion of the second member (that is, a structure in which the secondmember and second member configuring layer are stacked from the firstsubstrate), the light absorbing layer can be provided in the middleportion of the second member (that is, a structure in which the secondmember configuring layer, the light absorbing layer, and the secondmember configuring layer are stacked from the first substrate), or thelight absorbing layer can be provided on the top portion of the secondmember (that is, a structure in which the second member configuringlayer and the second member are stacked from the first substrate).Further, two or more of the light absorbing layer may be formed.

Further, the light emitting apparatus of the present disclosure havingthe preferred configurations and structures described above may beconfigured to include a color filter.

When the light emitting apparatus is a color light emitting apparatus,one pixel is configured with three sub-pixels of a red luminoussub-pixel that emits red light, a green luminous sub-pixel that emitsgreen light, and a blue luminous sub-pixel that emits blue light, orconfigured with four or more sub-pixels. In the color light emittingapparatus, the red luminous sub-pixel may be configured with a lightemitting device that emits red light, the green luminous sub-pixel maybe configured with a light emitting device that emits green light, andthe blue luminous sub-pixel may be configured with a light emittingdevice that emits blue light. In the following upper surface lightemitting-type light emitting apparatus of the present disclosure havingthe preferred configurations and structures described above, the secondsubstrate may be configured to have a color filter, the light emittingdevice may be configured to emit white light, and each color luminoussub-pixel may be configured by combining a color filter and the lightemitting device that emits white light. The second substrate may beconfigured to include a light shielding layer (black matrix). In thesame manner, in the following lower surface light emitting-type lightemitting apparatus, the first substrate may be configured to include acolor filter or a light shielding layer (black matrix).

In addition, the light emitting apparatus of the present disclosurehaving the preferred configurations and structures described above mayhave a configuration in which the light emitting device and the firstmember are in contact with each other. According to this, since lightemitted from the light emitting unit necessarily and directly enters thefirst member, the light extraction efficiency is not greatly decreased.

Additionally, the light emitting apparatus of the present disclosurehaving the preferred configurations and structures described above mayhave a configuration in which light from each light emitting device isemitted to the outside through the second substrate. Further, the lightemitting apparatus as described above may be referred to as an “uppersurface light emitting-type light emitting apparatus”. However, thepresent disclosure is not limited to such configurations, and the lightfrom each light emitting device can be emitted to the outside throughthe first substrate. Further, the light emitting apparatus as describedabove may be referred to as a “lower surface light emitting-type lightemitting apparatus”.

The light reflecting film of the light emitting apparatus according tothe second embodiment of the present disclosure and the light reflectingmember of the light emitting apparatus according to the fourthembodiment of the present disclosure may be configured with, forexample, an aluminum (Al) layer, an aluminum alloy layer (for example,an Al—Nd layer), a chromium (Cr) layer, a silver (Ag) layer, and asilver alloy layer (for example, an Ag—Pd—Cu layer, and an Ag—Sm—Culayer), and can be formed by, for example, a deposition method includingan electron beam vapor deposition method, a heat filament vapordeposition method, and a vacuum deposition method, a sputtering method,a CVD method, and an ion plating method; a plating method (anelectroplating method or an electroless plating method); a lift-offmethod; a laser ablation method; and a sol-gel method.

Otherwise, the light reflecting film of the light emitting apparatusaccording to the second embodiment of the present disclosure may beconfigured with a material having a refractive index less than therefractive index n₁ of a material configuring the first member. Here,examples of a material configuring the light reflecting film asdescribed above include a material configuring the second member of thelight emitting apparatus according to the third embodiment of thepresent disclosure to be described below. In this case, examples of amaterial configuring the first member include a material configuring thefirst member of the light emitting apparatus according to the thirdembodiment of the present disclosure to be described below. Further,when the refractive index of the material configuring the lightreflecting film as described above is n₂″, it is desirable to satisfy

n ₁ −n ₂″≥0.2 and preferably

n ₁ −n ₂″≥0.3.

In the light emitting apparatus according to the third embodiment of thepresent disclosure having the preferred configurations and structuresdescribed above, examples of a material configuring the first memberinclude Si_(1-x)N_(x), ITO, IZO, TiO₂, Nb₂O₅, a bromine-containingpolymer, a sulfur-containing polymer, a titanium-containing polymer, ora zirconium-containing polymer, and examples of a material configuringthe second member except for the light absorbing layer include SiO₂,MgF, LiF, a polyimide resin, an acrylic resin, a fluorine-based resin, asilicone resin, a fluorine-based polymer, or a silicone-based polymer.

In the light emitting apparatus of the present disclosure having thepreferred configurations and structures described above except for thelight emitting apparatus according to the third embodiment of thepresent disclosure, examples of a material configuring the first member,and also examples of a material configuring the second member except forthe light absorbing layer include SiO₂, Si_(1-x)N_(x), TiO₂, Nb₂O₅, MgF,LiF, a polyimide resin, an acrylic resin, a fluorine-based resin, asilicone resin, a fluorine-based polymer, a silicone-based polymer, abromine-containing polymer, a sulfur-containing polymer, atitanium-containing polymer, and a zirconium-containing polymer.

Meanwhile, examples of a material configuring the light absorbing layerinclude carbon, a metal thin film (a thin film made with, for example,chromium, nickel, aluminum, molybdenum, or an alloy thereof), metallicoxide (for example, chromium oxide), metal nitride (for example,chromium nitride), an organic resin, a glass paste containing a blackpigment and the like, and various resins containing a black dye or ablack pigment such as carbon black. Specifically, examples of thematerial configuring the light absorbing layer include a photosensitivepolyimide resin, chromium oxide, and a chromium oxide/chromium laminatedfilm. The light absorbing layer may be formed by a method appropriatelyselected from, for example, a combination of a vacuum deposition methodor a sputtering method and an etching method, a combination of a vacuumdeposition method or a sputtering method, a spin coating method, and alift-off method, a screening printing method, and a lithographytechnique, depending on a used material. The difference between therefractive index n₂′ of a material configuring the light absorbing layerand the refractive index n₂ of a material configuring the second memberconfiguring layer is preferably as small as possible. The lightabsorbing layer refers to a layer with absorptivity of visible light of90% or more, and preferably 99% or more.

As a material configuring the protecting film, it is preferable to use amaterial that is transparent to light emitted from the light emittinglayer, that is dense, and that does not allow moisture to penetrate.Specifically, examples of the material configuring the protecting filminclude amorphous silicon (α-Si), amorphous silicon carbide (α-SiC),amorphous silicon nitride (α-Si_(1-x)N_(x)), amorphous silicon oxide(α-Si_(1-y)O_(y)), amorphous carbon (α-C), amorphous silicon oxynitride(α-SiON), and Al₂O₃. In addition, examples of a material configuring theadhesive layer include a thermosetting adhesive agent such as an acrylicadhesive agent, an epoxy adhesive agent, a urethane adhesive agent, asilicone adhesive agent, a cyanoacrylate adhesive agent, and anultraviolet ray curable adhesive agent.

In the light emitting apparatus of the present disclosure having thepreferred configurations and structures described above (hereinafter,collectively referred to as a “light emitting apparatus of the presentdisclosure” in some cases) in which one pixel (or one sub-pixel) isconfigured with one light emitting device, though the present disclosureis not limited thereto, examples of an array of the pixel (or thesub-pixel) include a stripe array, a diagonal array, a delta array, or arectangle array. In addition, in the light emitting apparatus of thepresent disclosure in which one pixel (or one sub-pixel) is configuredby a plurality of light emitting device, though the present disclosureis not limited thereto, examples of an array of the pixel (or thesub-pixel) include a stripe array. A configuration in which a pluralityof light reflecting portions (reflector) is provided for one lightemitting device is possible and a configuration in which one lightreflecting portion (reflector) is provided for one light emitting deviceis possible.

In the light emitting apparatus of the present disclosure and the like,the light reflecting portion is configured with a portion of the surfaceof the rotating body (truncated rotating body), and the cross section ofthe light reflecting portion when the axis line of the light reflectingportion that is a rotating axis of the rotating body is a z axis and thelight reflecting portion cut through a virtual plane including the zaxis is preferably configured in a trapezoid shape or with a portion ofa parabola, but it may be configured by another structure. The rotatingbody may be configured with a sphere, a spheroid, and a paraboloid ofrevolution, or may be configured with a curved surface obtained byrotating a portion of a curve such as a two-leaf line, a three-leafline, a four-leaf line, a lemniscate, a snail line, a folium, aconchoid, a cissoid, a probability curve, a tractrix, a catenary, acycloid, a trochoid, an astroid, a semicubical parabola, a Lissajouscurve, the witch of Agnesi, an epicycloid, a cardioid, a hypocycloid, aclothoid curve, and a spiral obtained by a third-order polynomial orhigher. In addition, in some cases, the rotating body may be configuredwith a surface obtained by rotating one line segment, a combination of aplurality of line segments, or a combination of a line segment and acurve. Otherwise, the light reflecting portion may be configured with apyramidal frustum (for example, a truncated triangular pyramid, atruncated quadrangular pyramid, a truncated hexagonal pyramid, atruncated octagonal pyramid, and the like). Further, examples of avisible outline of the light reflecting portion when the lightreflecting portion is cut through the xy plane include a certain closedcurve.

Otherwise, the light emitting apparatus according to the presentdisclosure may have a configuration in which one pixel (or onesub-pixel) is configured with one light emitting device, the firstmember has a truncated cone shape (or a truncated rotating body shape),and

0.5≤R ₁ /R ₂≤0.8 and

0.5≤H/R ₁≤2.0

are satisfied when a diameter of the light incident surface is R₁, adiameter of the light emitting surface is R₂, and a height is H.Further, the cross-section of the truncated cone-shaped inclined plane(a cross section obtained when the truncated cone shape is cut through avirtual plane including an axis line of the truncated cone shape; thesame shape hereinafter) may be linear, may be a combination of aplurality of line segments, or may be configured with curves. It ispreferable to satisfy

0.5≤R ₀ /R ₁≤1.0,

when a diameter of the light emitting unit is R₀.

Otherwise, the light emitting apparatus according to the presentdisclosure may have a configuration in which one pixel (or onesub-pixel) is configured by a plurality of light emitting devices, thefirst member has a truncated cone shape (or a shape of a truncatedrotating body), and

0.5≤R ₁ /R ₂≤0.8 and

0.5≤H/R ₁≤2.0

are satisfied, when a diameter of the light incident surface is R₁, adiameter of the light emitting surface is R₂, and a height is H. Thenumber of the light emitting devices configuring one pixel (or onesub-pixel) may be in a range from 3 to 1000. Further, the cross-sectionof the truncated cone-shaped inclined plane may be linear, may be acombination of a plurality of line segments, or may be configured withcurves. It is preferable to satisfy

0.5≤R ₀ /R ₁≤1.0,

when a diameter of the light emitting unit is R₀.

Examples of the shortest distance (referred to as a “distance betweenstructures” for convenience) between the top surfaces of the secondmembers with respect to the neighboring light emitting devices include 0μm, or include 2 μm or 4 μm, but the shortest distance is not limitedthereto and vary depending on the specification for the light emittingapparatus.

When the first electrode of the upper surface light emitting-type lightemitting apparatus or the second electrode of the lower surface lightemitting-type light emitting apparatus (the electrodes are referred toas “light reflecting electrodes” in some cases for convenience) functionas anode electrodes, examples of a material (light reflecting material)configuring the light reflecting electrode include, for example, a highwork function metal such as platinum (Pt), gold (Au), silver (Ag),chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt(Co), or tantalum (Ta) or an alloy thereof (for example, an Ag—Pd—Cualloy including silver as a main component, palladium (Pd) of 0.3% bymass to 1% by mass, and copper (Cu) of 0.3% by mass to 1% by mass or anAl—Nd alloy). Further, when the conductive material such as aluminum(Al), an alloy including aluminum with low values of the work functions,and high light reflectivity is used, the hole injection property isenhanced by appropriately providing the hole injecting layer so that thelight reflecting electrode can be used as an anode electrode. Examplesof the thickness of the light reflecting electrode include 0.1 to 1 μm.Otherwise, the light reflecting electrode may have a configuration inwhich a transparent conductive material having an excellent holeinjection property such as indium tin oxide (ITO) and indium zinc oxide(IZO) is stacked on a dielectric multilayer or a light reflecting filmwith high reflectivity, such as aluminum (Al). Meanwhile, if the lightreflecting electrode functions as a cathode electrode, it is desirablethat the light reflecting electrode is configured with the conductivematerial with a low value of the work function and high lightreflectivity, but the electron injecting property of the conductivematerial with high light reflectivity which is used as an anodeelectrode can be enhanced by providing an appropriate electron injectinglayer so that the conductive material can be used as a cathodeelectrode.

Meanwhile, when the second electrode of the upper surface lightemitting-type light emitting apparatus or the first electrode of thelower surface light emitting-type light emitting apparatus (hereinafter,the electrodes are referred to as “translucent electrodes” in some casesfor convenience) function as cathode electrodes, it is desirable that amaterial (translucent material or light transmitting material)configuring the translucent electrode is configured with a conductivematerial that has a low work function so that the emitted light istransmitted and electrons are effectively injected into the organiclayer. Examples of the material include a metal with a low work functionsuch as aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium(Na), or strontium (Sr) or an alloy thereof, an alloy of an alkali metalor an alkali earth metal and a silver (Ag) [for example, an alloy ofmagnesium (Mg) and silver (Ag) (Mg—Ag alloy)], an alloy of magnesium andcalcium (Mg—Ca alloy), and an alloy of aluminum (Al) and lithium (Li)(Al—Li alloy). Among them, an Mg—Ag alloy is preferable, and a volumeratio between magnesium and silver (Mg:Ag) may range from 5:1 to 30:1.Otherwise, a volume ratio between magnesium and silver (Mg:Ag) may rangefrom 2:1 to 10:1. Examples of the thickness of the translucent electroderange from 4 nm to 50 nm, preferably 4 nm to 20 nm, and more preferablyfrom 6 nm to 12 nm. Otherwise, the translucent electrode can be formedin a layered structure in which a material layer described above and aso-called transparent electrode (for example, with the thickness of3×10⁻⁸ m to 1×10⁻⁶ m) made with, for example, ITO or IZO are layered,from the organic layer. In the case of the layered structure, thethickness of the material layer described above may be as thin as 1 nmto 4 nm. In addition, it is possible to configure the translucentelectrode with the transparent electrode only. Otherwise, lowresistivity on the entire body of the translucent electrode can beobtained by providing a bus electrode (auxiliary electrode) made with amaterial with low resistivity such as aluminum, an aluminum alloy,silver, a silver alloy, copper, a copper alloy, gold, a gold alloy, andthe like, for the translucent electrode. Meanwhile, if the translucentelectrode functions as an anode electrode, it is desirable that thetranslucent electrode is configured with a conductive material thattransmits emitted light and also has a high value of the work function.

An average light reflectivity of the light reflecting electrode is 50%or higher, and preferably 80% or higher, and average light transmittanceof the translucent electrode ranges from 50% to 90%, and preferably from60% to 90%.

Examples of a method of forming the first electrode and the secondelectrode include a deposition method including a electron beam vapordeposition method, a heat filament vapor deposition method, a vacuumdeposition method, a sputtering method, a chemical vapor deposition (CVDmethod), an MOCVD method, a combination of an ion plating method and anetching method; various printing methods such as a screen printingmethod, an inkjet printing method, and a metal mask printing method; aplating method (an electroplating method or an electroless platingmethod); a lift-off method; a laser ablation method; and a sol-gelmethod. According to various printing methods or plating methods, it ispossible to directly form the first electrode and the second electrodehaving desired shapes (pattern). Further, after forming the organiclayer, when the first electrode or the second electrode is formed, it ispreferably formed particularly based on a film forming method such as avacuum deposition method requesting less energy of film formingparticles or a film forming method such as an MOCVD method, in thatdamage to the organic layer is prevented from being generated. If damageis generated to the organic layer, it is likely to generate anon-luminous pixel (or non-luminous sub-pixel) called a “dead pixel”caused by a leakage current. In addition, it is preferable to perform anoperation from forming an organic layer to forming the electrodeswithout being exposed to the atmosphere in that the deterioration of theorganic layer caused by moisture in the atmosphere is prevented. In somecases, either the first electrode or the second electrode may not bepatterned.

In the light emitting apparatus of the present disclosure, and the like,a plurality of light emitting devices are formed on the first substrate.Here, examples of the first substrate or the second substrate include ahigh strain point glass substrate, a soda glass (Na₂O.CaO.SiO₂)substrate, a borosilicate glass (Na₂O.B₂O₃.SiO₂) substrate, a forsterite(2MgO.SiO₂) substrate, a lead glass (Na₂O.PbO.SiO₂) substrate, variousglass substrates having an insulating layer formed on the surfacethereof, a quartz substrate, a quartz substrate having an insulatinglayer formed on the surface thereof, a silicon substrate having aninsulating layer formed on the surface thereof, and an organic polymer(a configuration of a high polymer material such as a plastic film, aplastic-sheet, and a plastic substrate that have flexibility and areconfigured with a high polymer material) such as polymethyl methacrylate(PMMA) or polyvinyl alcohol (PVA), polyvinyl phenol (PVP),polyethersulfone (PES), polyimide, polycarbonate, andpolyethylene-telephthalate (PET). The materials configuring the firstsubstrate and the second substrate may be identical to or different fromeach other. However, the second substrate of the upper surface lightemitting-type light emitting apparatus is asked to be transparent tolight emitted by the light emitting device and the first substrate ofthe lower surface light emitting-type light emitting apparatus is askedto be transparent to light emitted by the light emitting device.

Examples of the light emitting apparatus of the present disclosure andthe like include an organic electronic luminescence light emittingapparatus (simply referred to as an organic EL light emittingapparatus). If the organic EL light emitting apparatus is a colordisplay organic EL light emitting apparatus, the sub-pixels areconfigured as described above by each of the organic EL devices includedin the organic EL light emitting apparatus. Here, one pixel isconfigured with, for example, three sub-pixels of a red luminoussub-pixel that emits red light, a green luminous sub-pixel that emitsgreen light, and a blue luminous sub-pixel that emits blue light asdescribed above. Accordingly, in this case, if the number of the organicEL devices included in the organic EL light emitting apparatus is N×M,the number of the pixels is (N×M)/3. For example, the organic EL lightemitting apparatus can be used as a monitoring apparatus configuring apersonal computer, or as a monitoring apparatus included in a televisionreceiver, a cellular phone, a Personal Digital Assistant (PDA), or gameequipment. Otherwise, the organic EL light emitting apparatus can beapplied to an electrical viewfinder (EVF) and a head mounted display(HMD). Otherwise, examples of the light emitting apparatus of thepresent disclosure and the like additionally include a lighting systemincluding a backlight device of a liquid crystal display and a planelight source device.

The organic layer includes a light emitting layer (for example, a lightemitting layer made with an organic light emitting material).Specifically, the organic layer may be configured in, for example, alayered structure of a hole transporting layer, a light emitting layer,and an electron transporting layer, a layered structure of a holetransporting layer and a light emitting layer also serving as anelectron transporting layer, a layered structure of a hole injectinglayer, a hole transporting layer, a light emitting layer, an electrontransporting layer, and an electron injecting layer, or the like. Inaddition, if the layered structure is a “tandem unit”, the organic layermay have a double tandem structure in which a first tandem unit, aconnecting layer, and a second tandem unit are stacked, or may have atriple-or-higher tandem structure in which three or more tandem unitsare stacked. In this case, since the colors of emitted light are changedby each tandem unit of a red color, a green color, and a blue color, anorganic layer that emits light of a white color as a whole can beobtained. Examples of a method of forming an organic layer includevarious coating methods such as a physical vapor deposition method (PVDmethod) such as a vacuum deposition method; a printing method such as ascreen printing method and an ink jet printing method; and a lasertransferring method in which a layered structure of a laser absorbinglayer and an organic layer on a substrate for transfer is irradiatedwith a laser beam, the organic layer on the laser absorbing layer isseparated, and the organic layer is transferred. If the organic layer isformed based on the vacuum deposition method, the organic layer can beobtained by using a so-called metal mask and by depositing a materialthat has passed through an opening provided in the metal mask, or theorganic layer may be formed on the entire surface without patterning.

In the upper surface light emitting-type light emitting apparatus, thefirst electrode is provided, for example, on the interlayer insulatinglayer. Subsequently, the interlayer insulating layer covers a lightemitting device driving unit formed on the first substrate. The lightemitting device driving unit is configured with one or a plurality ofthin film transistors (TFT), and the TFT and the first electrode areelectrically connected to each other through a contact plug provided inthe interlayer insulating layer. As a material configuring theinterlayer insulating layer, SiO₂, BPSG, PSG, BSG, AsSG, PbSG, SiON, SOG(spin-on glass), an SiO₂-based material such as low-melting glass orglass paste; an SiN-based material; and an insulating resin such as apolyimide resin, a novolac resin, an acrylic resin, or polybenzoxazole,can be used alone or by appropriately being combined. Processesaccording to the related art such as a CVD method, a coating method, asputtering method, and various printing methods can be used for formingthe interlayer insulating layer. In the lower surface lightemitting-type light emitting apparatus having configurations andstructures in which light from the light emitting device passes throughan interlayer insulating layer, the interlayer insulating layer is askedto be configured with a material transparent to the light from the lightemitting device and the light emitting device driving unit is asked tobe formed not to block the light from the light emitting device. Inaddition, in the lower surface light emitting-type light emittingapparatus, the light emitting device driving unit can be provided in theupper portion of the second electrode.

In order to achieve an object of preventing moisture from reaching theorganic layer, an insulating or conductive protecting film is preferablyprovided in the upper portion of the organic layer as described above.The protecting film is preferably formed particularly based on a filmforming method such as a vacuum deposition method requesting less energyof film forming particles or a film forming method such as a CVD methodor an MOCVD method, in that an effect on the undercoat can be minimized.Otherwise, it is desirable to set a film forming temperature to be theroom temperature in order to prevent a decrease in the brightness causedby the deterioration of the organic layer, and it is further desirableto form the protecting film in a condition in which the stress on theprotecting film is minimized in order to prevent the protecting filmfrom peeling off. In addition, it is preferable to form the protectingfilm without exposing previously formed electrodes to the atmosphere.According to this, the deterioration of the organic layer caused bymoisture or oxygen in the atmosphere can be prevented. Further, if thelight emitting apparatus is an upper surface light emitting type, theprotecting film is preferably configured with a material that transmitslight emitted by the organic layer, for example, by 80% or more.Specifically, examples of a material of the protecting film include aninorganic amorphous insulating material, for example, the materialdescribed above. Since such an inorganic amorphous insulating materialdoes not generate grains, an excellent protecting film with low waterpermeability can be formed. Further, if the protecting film isconfigured with a conductive material, the protecting film may beconfigured with a transparent conductive material such as ITO or IZO.

Example 1

Example 1 relates to a light emitting apparatus of the presentdisclosure, specifically to an organic EL light emitting apparatus, andrelates to a light emitting apparatus according to first and secondembodiments of the present disclosure. FIG. 1 is a schematic partialcross-sectional view of a light emitting apparatus of Example 1(hereinafter, it may be referred to as an organic EL light emittingapparatus). FIG. 12 is a schematic diagram of an organic layer and thelike. FIG. 13A is a schematic diagram illustrating an array ofsub-pixels. Further, FIG. 12 illustrates a single organic layer for thesake of simplifying the drawing, but in reality, a plurality of organiclayers are stacked to form a multi-layer tandem structure.

Further, organic EL light emitting apparatuses according to Example 1 orExamples 2 to 8 and 10 to be described below are upper surface lightemitting-type light emitting apparatuses. That is, light from each lightemitting device 10 is emitted to the outside through a second electrodecorresponding to an upper electrode and a second substrate 34.Meanwhile, the organic EL light emitting apparatus in Example 9 to bedescribed below is a lower surface light emitting-type light emittingapparatus in which light from each light emitting device 10 is emittedto the outside through the first substrate 11.

As illustrated in FIGS. 1 to 10, the organic EL light emitting apparatusaccording to Example 1 or Examples 2 to 10 to be described belowincludes:

(A) a first substrate 11 on which a plurality of light emitting devices10 each formed by stacking a first electrode 21, a light emitting unit24 configured with an organic layer 23 including a light emitting layer23A made with, for example, an organic light emitting material, and asecond electrode 22 are formed; and

(B) the second substrate 34 disposed opposite the first substrate 11,

in which the first substrate 11 includes

a first member 51 that diffuses light from each of the light emittingdevice 10 and emits the light to the outside, and

a second member 52 provided between the first members 51, and

light absorbing layers 54 are provided in the second members 52.Further, the first members 51 and the second members 52 including thelight absorbing layers 54 may be collectively referred to as a “lightreflecting layer 50”.

Here, each of the light emitting device (organic EL device) 10 in theorganic EL light emitting apparatuses according to Example 1, orExamples 2 to 10 to be described below more specifically includes:

(a) the first electrode 21;

(b) the second member 52 that has an opening 25 and exposes the firstelectrode 21 through the lower portion of the opening 25;

(c) the organic layer 23 including the light emitting layer 23A providedat least on a portion of the first electrode 21 exposed through thelower portion of the opening 25, and made with, for example, an organiclight emitting material; and

(d) the second electrode 22 that is formed on the organic layer 23. Theorganic layer 23 has a layered structure of, for example, a holeinjecting and transporting layer 23B, the light emitting layer 23A, andan electron transporting layer 23C. In the drawings, the organic layer23 may be illustrated as a single layer.

The organic EL light emitting apparatuses according to Example 1, orExamples 2 to 10 to be described below are high resolution lightemitting apparatuses applied to an electrical viewfinder (EVF) or a headmounted display (HMD), or are, for example, large-sized organic EL lightemitting apparatuses such as television receivers.

The organic EL light emitting apparatuses according to Example 1, orExamples 2 to 10 to be described below each have a plurality of lightemitting devices (specifically, organic EL devices) 10. In particular,the number of pixels, for example, is 2048×1236, and one light emittingdevice 10 forms one sub-pixel, and the number of the light emittingdevices (specifically, organic EL devices) 10 is three times the numberof the pixels. Further, the organic EL light emitting apparatus is anactive matrix-type color display.

One pixel is configured with three sub-pixels of a red luminoussub-pixel that emits red light, a green luminous sub-pixel that emitsgreen light, and a blue luminous sub-pixel that emits blue light.Further, the second substrate 34 includes a color filter 33, the lightemitting device 10 emits white light, and each color luminous sub-pixelis configured by combining the light emitting device 10 emitting whitelight with the color filter 33. The color filter 33 is configured with aregion through which passed light becomes red, a region through whichpassed light becomes green, and a region through which passed lightbecomes blue. A light shielding film (black matrix) may be providedbetween the color filters 33. The light emitting device 10 and the firstmembers 51 are in contact with each other. Specifically, the secondelectrode 22 and the first members 51 are directly in contact with eachother.

In the organic EL light emitting apparatuses according to Example 1, orExamples 2 to 10 to be described below, the array of sub-pixels is apseudo delta array as illustrated in FIGS. 13A and 13B, and the size ofone pixel enclosed by a dotted line is, for example, 5 μm×5 μm. Further,FIGS. 13A and 13B illustrate four pixels. In FIGS. 13A and 13B, the redluminous sub-pixel is denoted by “R”, the green luminous sub-pixel isdenoted by “G”, and the blue luminous sub-pixel is denoted by “B”. Adistance between structures is 0 μm in the example illustrated in FIG.13A, and a distance between structures is greater than 0 μm in theexample illustrated in FIG. 13B.

Each of the light emitting devices according to Example 1, or Examples 2to 10 to be described below has a triple tandem structure in which threetandem units are stacked, and the organic layer 23 in each tandem unitis specifically configured with a red light emitting organic layer, agreen light emitting organic layer, and a blue light emitting organiclayer. However, the structure is not limited thereto. Further, anaverage refractive index of the entire organic layer satisfies (realpart, imaginary part)=(1.85, 0).

Specifically, the red light emitting organic layer is configured inorder from the first electrode, with:

[Hole injecting layer] (thickness of 10 nm): LGHIL manufactured by LGChem,

[Hole transporting layer] (thickness of 26 nm): HT320 manufactured byIdemitsu Kosan Co., Ltd.,

[Light emitting layer] (thickness of 50 nm): RH001 manufactured byIdemitsu Kosan Co., Ltd., and

D125 (0.5% dope) manufactured by Toray Industries, Inc., and

[Electron transporting layer] (Thickness of 220 nm): ET085 manufacturedby Idemitsu Kosan Co., Ltd.

Further, the green light emitting organic layer is configured in orderfrom the first electrode, with:

[Hole injecting layer] (thickness of 10 nm): LGHIL manufactured by LGChem,

[Hole transporting layer] (thickness of 35 nm): HT320 manufactured byIdemitsu Kosan Co., Ltd.,

[Light emitting layer] (thickness of 30 nm): BH232 manufactured byIdemitsu Kosan Co., Ltd., and

GD206 (10% dope), and

[Electron transporting layer] (thickness of 175 nm): ETS085 manufacturedby Idemitsu Kosan Co., Ltd.

Further, the blue light emitting organic layer is configured in orderfrom the first electrode, with:

[Hole injecting layer] (thickness of 10 nm): LGHIL manufactured by LGChem,

[Hole transporting layer] (thickness of 24 nm): HT320 manufactured byIdemitsu Kosan Co., Ltd.,

[Light emitting layer] (thickness of 30 nm): BH232 manufactured byIdemitsu Kosan Co., Ltd., and

BD218 (10% dope), and

[Electron transporting layer] (thickness of 141 nm): ET085 manufacturedby Idemitsu Kosan Co., Ltd.

The organic EL light emitting apparatuses according to Example 1, orExamples 2 to 8 and 10 to be described below uses the first electrode 21as an anode electrode, and the second electrode 22 as a cathodeelectrode. The first electrode 21 is made with a light reflectingmaterial, specifically, an Al—Nd alloy, and the second electrode 22 ismade with a translucent material, specifically, a conductive materialincluding magnesium (Mg), and more specifically an Mg—Ag alloy with athickness of 10 nm. The first electrode 21 is formed based on acombination of a vacuum deposition method and an etching method.Further, the second electrode 22 is formed by a film forming methodrequesting less energy of film forming particles, such as a vacuumdeposition method, specifically, and patterning is not performedthereon. The measurement results of light reflectivity of the firstelectrode 21, and the refractive index and the light transmittance ofthe second electrode 22 are as presented in Table 1 below.

TABLE 1 Refractive index of first electrode 21 Real part: 0.755Imaginary part: 5.466 Refractive index of second electrode 22 Real part:0.617 Imaginary part: 3.904 Light reflectivity of first electrode 21: 85Light transmittance of second electrode 22: 57%

In the organic EL light emitting apparatuses according to Example 1, orExamples 2 to 8 and 10 to be described below, the first electrode 21that configures an organic EL device is provided in an interlayerinsulating layer 16 (more specifically, an upper interlayer insulatinglayer 16B) made with SiON formed based on a CVD method. Then, theinterlayer insulating layer 16 covers an organic EL device driving unitformed on the first substrate 11. The organic EL device driving unitsare configured with a plurality of TFTs, and the TFTs and the firstelectrodes 21 are electrically connected to each other through contactplugs 18, wires 17, contact plugs 17A provided in an interlayerinsulating layer (more specifically, the upper interlayer insulatinglayer 16B). Further, in the drawings, one TFT is illustrated for oneorganic EL device driving unit. The TFT includes gate electrodes 12 thatare formed on the first substrate 11, a gate insulating film 13 that isformed on the first substrate 11 and the gate electrodes 12,source/drain regions 14 that are formed in the semiconductor layerformed on the gate insulating film 13, and channel forming regions 15that are formed between the source/drain regions 14, and correspond toparts of the semiconductor layer positioned on the gate electrodes 12.Further, in the example illustrated in the drawings, the TFT is a bottomgate type, but the TFT may be a top gate type. The gate electrodes 12 ofthe TFT are connected to a scanning circuit (not illustrated).

In the organic EL light emitting apparatuses according to Example 1, orExamples 2 to 8 and 10 to be described below, the first substrate 11 isconfigured with a silicon substrate, and the second substrate 34 isconfigured with non-alkali glass or quartz glass. Meanwhile, in Example9 to be described below, the first substrate 11 and the second substrate34 are configured with non-alkali glass or quartz glass.

In the organic EL light emitting apparatuses according to Example 1, orExamples 2 to 10 to be described below, at least a portion of lightdiffused in the first members 51 is reflected at an interface betweenthe first members 51 and the second members 52.

Further, in the organic EL light emitting apparatus according to Example1, light reflecting films (light reflecting portion) 71 are formed onthe interface between the first members 51 and the second members 52.The light reflecting films 71 are made with Al—Nd, specifically, andformed on inclined side walls of the second members 52. In the organicEL light emitting apparatus of Example 1, at least a portion (all inExample 1) of light diffused in the first members 51 is reflected on thesurface of the light reflecting films 71.

In the organic EL light emitting apparatus of Example 1, the lightabsorbing layers 54 are provided in the second members 52, butspecifically, the second member 52 is configured by stacking the lightabsorbing layer 54 and a second member configuring layer 53. Inparticular, the light absorbing layers 54 are provided in the lowerportion of the second members 52. That is, the organic EL light emittingapparatus is configured by stacking the second members 52 and the secondmember configuring layers 53, from the first substrate.

In the organic EL light emitting apparatuses according to Example 1, orExamples 2 to 4 and 6 to 10 to be described below, the first members 51having a truncated cone shape are made with silicon nitride(Si_(1-x)N_(x)), the second member configuring layers 53 that configurethe second members 52 are made with SiO₂, and the light absorbing layers54 are made with an acrylic resin including carbon black. Refractiveindexes n₁ of a material configuring the first members 51, averagerefractive indexes n₂, of a material configuring the second members 52that includes the light absorbing layers 54, refractive indexes n₂ of amaterial configuring the second member configuring layers 53, andrefractive indexes n₂′ of a material configuring the light absorbinglayer are presented in Table 2 described below.

Further, in the organic EL light emitting apparatus, according toExample 1, or Examples 2 to 9 to be described below, a protecting film31 and a sealing material layer 32 are further provided in the lightreflecting layer 50 (on the first members 51 and the second members 52).Though refractive indexes n₃ of the protecting film 31 made withSi_(1-y)N_(y), and refractive indexes n₄ of the sealing material layer32 made with an epoxy resin are presented in Table 2, the indexessatisfies |n₃−n₄|≤0.3. The protecting film 31 is formed based on aplasma CVD method in order to prevent the moisture from reaching theorganic layer 23. Further, the first members 51 and the protecting film31 may be formed at the same time, and the first members 51 and theprotecting film 31 may be integrally configured. Further, FIG. 1 isillustrated so that the top surface of the first members 51 and the topsurface of the second electrode 22 on the second members 52 have thesame level, but the first members 51 may cover the second electrode 22on the top surface of the second members 52. That is, the first members51 may cover the entire surface.

TABLE 2 Real part Imaginary part n₁ 1.81 0 n_(2-ave) 1.48 0 n₂ 1.46 0n₂′ 1.54 0 n₃ 1.81 0 n₄ 1.65 0

Hereinafter, an overview of a method of manufacturing an organic ELlight emitting apparatus according to Example 1 is described withreference to FIGS. 15A, 15B, 15C, 16A, 16B, and 17, and the organic ELlight emitting apparatus according to Example 1 can be manufacturedbased on each step of:

forming an interlayer insulating layer on the first substrate 11 andforming the first electrodes 21 on the interlayer insulating layer;

obtaining the second members 52 with the openings 25 having inclinedplanes by forming a second member forming layer on the first electrodes21 and the interlayer insulating layer and then selectively removing thesecond member forming layer on the first electrodes 21;

forming the light emitting unit 24 and the second electrode 22 thatextend to the inclined planes of the openings 25 from the firstelectrodes 21 exposed through the lower portion of the openings 25, andthen forming the light reflecting films 71 on the inclined planes of theopenings 25; and

forming the first members 51 on the second electrode 22.

Step 100

First, TFTs are manufactured for each sub-pixel on the first substrate11 by a method according to the related art. The TFTs are configuredwith the gate electrodes 12 that are formed on the first substrate 11,the gate insulating film 13 that is formed on the first substrate 11 andthe gate electrodes 12, the source/drain regions 14 that are formed inthe semiconductor layer formed on the gate insulating film 13, and thechannel forming regions 15 that are formed between the source/drainregions 14, and correspond to portions of the semiconductor layerpositioned on the gate electrodes 12. Further, in the exampleillustrated in the drawings, the TFT is a bottom gate type, but the TFTmay be a top gate type. The gate electrodes 12 of the TFT are connectedto a scanning circuit (not illustrated). Subsequently, the lowerinterlayer insulating layer 16A made with SiO₂ is formed by a CVD methodso as to cover the TFT, on the first substrate 11, and then the openings16′ are formed in the lower interlayer insulating layer 16A based on aphotolithography technique and an etching technique (see FIG. 15A).

Step 110

Subsequently, the wires 17 made with aluminum are formed on the lowerinterlayer insulating layer 16A based on a combination of a vacuumdeposition method and an etching method. Further, the wires 17 areelectrically connected to the source/drain regions 14 of the TFTsthrough the contact plugs 17A provided in the openings 16′. The wires 17are connected to signal supplying circuits (not illustrated). Then, theupper interlayer insulating layer 16B made with SiO₂ is formed on theentire surface by a CVD method. Subsequently, openings 18′ are formed onthe upper interlayer insulating layer 16B based on the photolithographytechnique and the etching technique (see FIG. 15B).

Step 120

Thereafter, the first electrodes 21 made with an Al—Nd alloy are formedon the upper interlayer insulating layer 16B, based on a combination ofthe vacuum deposition method and the etching method (see FIG. 15C).Further, the first electrodes 21 are electrically connected to the wires17 through the contact plugs 18 provided in the openings 18′.

Step 130

Subsequently, the second members 52 that include the light absorbinglayers 54 are formed. Specifically, a second member forming layer 52A (alayered structure of a SiO₂ layer that forms the second memberconfiguring layers 53 and a resin layer that includes carbon black forforming the light absorbing layers 54) is formed on the entire surfaceand the resist material layer 52B is formed on the second member forminglayer 52A. Subsequently, openings 52C are formed on the resist materiallayer 52B by exposing and developing the resist material layer 52B (seeFIG. 16A). Thereafter, the second member forming layer 52A is formedinto a tapered shape by etching the resist material layer 52B and thesecond member forming layer 52A based on the RIE method (see FIG. 16B),and finally the second members 52 with the openings 25 having inclinedside walls (a layered structure of the second member configuring layers53 and the light absorbing layers 54) can be obtained (see FIG. 17). Theopenings 25 have truncated cone shapes. Further, the second memberforming layer 52A can be formed into a tapered shape by controlling theetching condition. However, the method of forming the second members 52is not limited to the forming method described above, and, for example,the second members 52 as illustrated in FIG. 17 may be formed based on aphotolithography technique and a wet etching technique after a secondmember forming layer made with an acrylic resin or a polyimide resin isformed on the entire surface.

Step 140

Subsequently, the organic layer 23 is formed on the second members 52including the upper portion of the first electrodes 21 exposed throughthe lower portion of the openings 25 (that is, on the entire surface).Further, the organic layer 23 is obtained by sequentially stacking ahole injecting layer, a hole transporting layer, a light emitting layer,and an electron transporting layer, which are made with organicmaterials. The organic layer 23 can be obtained by performing vacuumdeposition on organic materials on the basis of resistance heating.

Step 150

Thereafter, the second electrode 22 is formed on the entire surface ofthe display area. The second electrode 22 covers the entire surface ofthe organic layer 23 that configures N×M organic EL devices. The secondelectrode 22 insulates the first electrodes 21 by the second members 52and the organic layer 23. The second electrode 22 is formed based on avacuum deposition method which is a film forming method requesting lessenergy of film forming particles to a degree in which there is noinfluence on the organic layer 23. Further, since the second electrode22 is formed in the same vacuum deposition apparatus in which theorganic layer 23 is continuously formed without exposing the organiclayer 23 to the atmosphere, the organic layer 23 is prevented from beingdeteriorated by the moisture or oxygen in the atmosphere. In particular,the second electrode 22 can be obtained by forming a Mg—Ag (volume ratioof 10:1) codepositing film with a thickness of 10 nm.

Step 160

Subsequently, the light reflecting films 71 made with Al—Nd can beformed on the inclined side walls of the second members 52(specifically, on the second electrode 22), based on the sputteringmethod and the etching technique.

Step 170

Subsequently, the first members 51 made with silicon nitride(Si_(1-x)N_(x)) is formed on the entire surface (specifically, on thesecond electrode 22 and the light reflecting films 71), and the lightreflecting layer 50 configured with the first members 51 and the secondmembers 52 can be obtained by performing a planarizing process.

Step 180

Thereafter, the insulating protecting film 31 made with silicon nitride(Si_(1-y)N_(y)) is formed on the light reflecting layer 50 by a vacuumdeposition method. Further, the first members 51 and the protecting film31 may be formed at the same time, and the first members 51 and theprotecting film 31 may be integrally formed. According to theconfiguration described above, a concave portion may be formed on thetop surface of the protecting film 31 influenced by the openings 25, butlight emitted from the light emitting device 10 can be effectivelyprevented from being diffused in the concave portion by regulating thevalue of |n₃−n₄| as described above.

Step 190

Subsequently, the second substrate 34 on which the color filter 33 isformed and the first substrate 11 on which the protecting film 31 isformed are attached using the sealing material layer 32. Finally, theorganic EL light emitting apparatus can be completed by performing aconnection with an external circuit.

In the method of manufacturing the organic EL light emitting apparatusaccording to Example 1 as described above, since the first members 51can be directly formed on the second electrode 22, there is no loss inextracting light emitted from a light emitting device which is caused bythe existence of an adhesive layer between the second electrode 22 and areflector.

In the organic EL light emitting apparatus in Example 1, the firstsubstrate includes first members (provided in a luminous region) thatdiffuse light from each light emitting device and emit the diffusedlight to the outside and second members (provided in the non-luminousregion) provided between the first members. Since light absorbing layersare provided in the second members, light that enters the second membersis absorbed by the light absorbing layers and it is difficult for thelight to be emitted from the organic EL light emitting apparatus to theoutside. Therefore, the contrast of the organic EL light emittingapparatus can be increased. Further, it is possible that light from eachlight emitting device is prevented from being totally reflected by thefirst members. That is, since the light emitting device and the firstmember are in contact with each other, specifically, the secondelectrode and the first member are directly in contact with each other,light from each light emitting device can be prevented from beingtotally reflected by the first members and light from each lightemitting device can be extracted without a drastic loss.

Example 2

Example 2 is a modification of Example 1. As FIG. 2 illustrates aschematic partial cross-sectional view of an organic EL light emittingapparatus according to Example 2, the light absorbing layers 54 areprovided in the middle portions of the second members 52. That is, theorganic EL light emitting apparatus has a structure obtained by stackingthe second member configuring layers 53, the light absorbing layers 54,and the second member configuring layers 53 from the first substrate.Except for the configuration described above, since the organic EL lightemitting apparatus according to Example 2 has the same configuration andstructure as the organic EL light emitting apparatus according toExample 1, the detailed description thereof will be omitted.

Example 3

Example 3 is a modification of Example 1. As FIG. 3 illustrates aschematic partial cross-sectional view of the organic EL light emittingapparatus according to Example 3, the light absorbing layers 54 areprovided on the top portions of the second members 52. That is, theorganic EL light emitting apparatus has a configuration obtained bystacking the second member configuring layers 53 and the second members52 from the first substrate. Except for the configuration describedabove, since the organic EL light emitting apparatus according toExample 3 has the same configuration and structure as the organic ELlight emitting apparatus according to Example 1, the detaileddescription thereof will be omitted.

Example 4

Example 4 is also a modification of Example 1. As FIG. 4 illustrates aschematic partial cross-sectional view of the organic EL light emittingapparatus according to Example 4, the second members 52 are formed withthe light absorbing layers 54. That is, the light absorbing layers 54occupy the entire portion of the second members 52. Except for theconfiguration described above, since the organic EL light emittingapparatus according to Example 4 has the same configuration andstructure as the organic EL light emitting apparatus according toExample 1, the detailed description thereof will be omitted.

Example 5

Example 5 is also a modification of Examples 1 to 4. In Examples 1 to 4,the light reflecting films 71 are made with Al—Nd. Meanwhile, as FIG. 5illustrates a schematic partial cross-sectional view of the organic ELlight emitting apparatus according to Example 5, the light reflectingfilms (light reflecting portion) 72 is made with a resin. Here, thelight reflecting films 72 in the organic EL light emitting apparatusaccording to Example 5 is made with a material having a refractive indexn₂″ less than the refractive index n₁ of a material configuring thefirst members 51. The real parts of the refractive indexes n₁, n_(z),n₂′, and n₂″ of materials that configure the first members 51, thesecond member configuring layers 53, the light absorbing layers 54, andthe light reflecting films 72 according to Example 5 are presented inTable 3. Further, the values of the imaginary parts are “0”. Further,

n ₁ −n ₂″≥0.2

is satisfied. The value of the average refractive index n_(2-ave) is1.58.

TABLE 3 Material configuring first members 51 Silicon nitride(Refractive index n₁: 1.81) Material configuring second memberconfiguring layers 53 Acrylic resin (Refractive index n₂: 1.54) Materialconfiguring light absorbing layers 54 Acrylic resin including carbonblack (Refractive index n₂′: 1.66/thickness: 1.7 μm) Materialconfiguring light reflecting films 72 Low refractive acrylic resin(Refractive index n₂″: 1.40/Thickness: 3.0 μm)

Except for the configurations described above, since the organic ELlight emitting apparatus according to Example 5 has the sameconfiguration and structure as the organic EL light emitting apparatusaccording to Examples 1 to 4, the detailed description thereof will beomitted.

In Example 5, it is simulated that when external light of 1 watt entersthe organic EL light emitting apparatus at an incidence angle θ_(in),the external light is absorbed by the light absorbing layers 54 andemitted from the organic EL light emitting apparatus. Additionally, anorganic EL light emitting apparatus in which the light absorbing layers54 are not provided is simulated as a comparative example in the samemanner. In addition, light amount ratios of external light andabsorptivities of external light are obtained. Further, comparativeexamples with respect to an organic EL light emitting apparatus in eachembodiment provided with the light absorbing layers 54 are referred toas “corresponding comparative examples”.

Light amount ratio of external light=(Amount of external light emittedfrom organic EL light emitting apparatus according to example)/(Amountof external light emitted from organic EL light emitting apparatusaccording to corresponding comparative example)

External light absorptivity=1−Light amount ratio of external light

In order to simplify a simulation, the simulation is performed byreplacing the entire portions of the protecting film 31 and the sealingmaterial layer 32 with resin layers with refractive indexes of 1.60 andthicknesses of 3.0 μm. Further, inclination angles θ of inclined planesof the first members 51 in truncated cone shapes are set to be 73° inprinciple, and diameters of the openings on the top portions of thefirst members in truncated cone shapes are set to be 7.0 μm. Further,thicknesses of the entire portion of the second members 52 including thelight absorbing layers 54 are set to be 5.0 μm, and the thickness of thelight absorbing layers 54 are set to be (5/3) μm in principle, anddistances between structures are set to be 0 μm in principle.

The simulation results when the incidence angle θ_(in)=15° are presentedin Table 4 below. Table 4 presents simulation results of brightnessefficiency, in combination. Here, the brightness efficiency is a ratioof light energy extracted to the outside of the organic EL lightemitting apparatus when the light energy of the light emitted from thelight emitting layer is set to be “1”, and the brightness efficiency isa value according to an example when brightness efficiency according toa corresponding comparative example is set to be “1”.

Further, a graph of results obtained by simulating light amount ratiosof external light according to Example 5A and corresponding ComparativeExample 5A corresponding to Example 5A is illustrated in FIG. 20A. Inaddition, results obtained by calculating absorptivities of the externallight based on the results illustrated in FIG. 20A are illustrated inFIG. 20B. Further, simulation results when the light absorbing layers 54are provided on the top portions of the second members 52 instead ofproviding the light absorbing layers 54 on the lower portions of thesecond members 52 are illustrated in FIG. 20C. Additionally, horizontalaxes in FIGS. 20A, 20B, and 20C are incidence angles θ_(in) of externallight, vertical axes in FIGS. 20A and 20C are light amounts ofreflective light (unit: watt), and a vertical axis in FIG. 20B isreflectivity of external light. In addition, in FIGS. 20A and 20C, theresults of the examples are indicated by black bars and the results ofthe corresponding comparative examples are indicated by white outlinedbars.

Further, simulation results according to respective cases in which thelight absorbing layers 54 are provided in the middle portions of thesecond members 52 (Example 5E), the light absorbing layers 54 with (5/3)μm thickness are provided on the top portion of the second members 52(Example 5F), the light absorbing layers 54 with 5/12 μm thickness areprovided on the top portion of the second members 52 (Example 5G), andthe second members 52 are configured with the light absorbing layers 54(Example 5H) are presented in Table 4.

TABLE 4 Refractive Light index n₂′ amount Brigh- of light Incli-Distance ratio of ness Exam- Incidence absorbing nation between externaleffi- ple angle θ_(in) layer angle θ structures light ciency 5A 15° 1.6073° 0 μm 0.78 0.96 30° Same as Same as Same as 0.57 0.96 above aboveabove 5B 15° Same as 67° Same as 0.78 0.99 above above 5C Same as 1.4073° Same as 0.81 1.00 above above 5D Same as 1.60 Same as 4 μm 0.12 0.90above above 5E Same as Same as Same as 0 μm 0.76 above above above 5FSame as Same as Same as 0 μm 0.78 above above above 5G Same as Same asSame as 0 μm 0.80 above above above 5H Same as Same as Same as 0 μm 0.69above above above

From Table 4, it is found that values of light amount ratios of theexternal light are sufficiently decreased by providing the lightabsorbing layers 54. Further, it is found that dependence of the valuesof the light amount ratios of the external light on inclination angles θof the inclined planes of the first members 51 in truncated cone shapes(see Example 5B) and on the refractive index n₂′ of materialsconfiguring the light absorbing layers 54 (see Example 5C) may not berecognized. Additionally, it is found that when the distances betweenstructures are set to be from 0 μm to 4 μm (see Example 5D), areas ofthe second members 52 occupying non-luminous regions and also areas ofthe light absorbing layers 54 are increased so that values of lightamount ratios of external light are drastically decreased. In addition,it is found that even if the light absorbing layers 54 are provided inthe lower portions of the second members 52 (for example, see Example5A), even if the light absorbing layers 54 are provided in the middleportions of the second members 52 (for example, see Example 5E), even ifthe light absorbing layers 54 are provided on the top portions of thesecond members 52 (for example, see Examples 5F and 5G), and even if thelight absorbing layers 54 occupy the entire portions of the secondmembers 52 (for example, see Example 5H), sufficient values of the lightamount ratios of the external light can be obtained. Additionally, inExample 5A, even if the thicknesses of the light absorbing layers 54 areset to be (⅚) μm and ( 5/12) μm, respectively, the values of lightamount ratios of external light in the same degree as Example 5A can beobtained.

Further, in some cases, the values of brightness efficiency are slightlydecreased. This is because brightness with respect to a correspondingcomparative example (see “B” in the graph) is slightly decreased at aviewing angle of approximately 20°, as indicated in simulation results(see “A” in the graph) on brightness with respect to viewing angles ofFIG. 21. The slight decrease in the brightness is caused by slightabsorption of light emitted from the light emitting layer by the lightabsorbing layers 54. However, the decrease in brightness efficiency inexamples is not a value that causes problems, in practice.

Example 6

Example 6 is also a modification of Examples 1 to 4, but relates to anorganic EL light emitting apparatus according to the third embodiment ofthe present disclosure. As FIG. 6 illustrates a schematic partialcross-sectional view, the organic EL light emitting apparatus accordingto Example 6 is different from the organic EL light emitting apparatusesaccording to Examples 1 to 4, and the light reflecting films 71 are notformed. Instead of this, the refractive indexes n₁ of materialsconfiguring the first members 51 and the average refractive indexesn_(2-ave) of materials configuring the second members 52 including thelight absorbing layers 54 satisfy

1.1≤n ₁≤1.8

and preferably

1.2≤n ₁≤1.6, and

n ₁ −n _(2-ave)≥0.2

and preferably

n ₁ −n _(2-ave)≥0.3.

Further, the refractive index n₂ of materials configuring the secondmembers 52 except for the light absorbing layers 54 and the refractiveindex n₂′ of materials configuring the light absorbing layers 54 satisfy

n ₁ −n ₂≥0.2

and preferably

n ₁ −n ₂≥0.3, and

n ₁ −n ₂′≥0.2

and preferably

n ₁ −n ₂′≥0.3.

In the organic EL light emitting apparatus according to Example 6, atleast a portion of light diffused in the first members 51 is reflectedon surfaces of the second members 52 that face the first members 51(that is, on the interfaces between the first members 51 and the secondmembers 52). The surface of the second members 52 that face the firstmembers 51 (or the interface between the first members 51 and the secondmembers 52) is referred to as a light reflecting portion 73. Further,more specifically, since the organic layer 23 and the second electrode22 are formed between the first members 51 and the second members 52, atleast a portion of light diffused in the first members 51 is reflectedon the interface between the second members 52 and the organic layer 23.

Examples of a material configuring the first members 51, a materialconfiguring the second member configuring layers 53, and a materialconfiguring the light absorbing layers 54 include the materialsdescribed in Example 1 or include the materials described in Example 5.Unlike in Examples 1 and 5, in Example 6, since the light reflectingfilms 71 and 72 are not formed, the manufacture process can besimplified.

Radiation angle distribution of brightness with respect to the organicEL light emitting apparatus according to Examples 1 and 6 is simulated.As a result, difference between the organic EL light emitting apparatushaving configurations and structures according to Example 6 (whenn₁−n₂=0.20) and the organic EL light emitting apparatus of Example 1 inthe radiation angle distribution of brightness is not recognized. Inother words, it is found that, when n₁−n₂≥0.20, the organic EL lightemitting apparatus according to Example 6 can obtain the same effect ofincreasing brightness as in the organic EL light emitting apparatusaccording to Example 1 in which the light reflecting films 71 are formedon the surface of the second members 52 that face the first members 51.

In the organic EL light emitting apparatus according to Example 6, sincevalues of the refractive indexes n₁, and values of differences betweenthe refractive indexes n₁ and average refractive indexes n_(2-ave) arenot regulated, the light extraction efficiency of light from the lightemitting device 10 to the outside can be further increased withoutproviding light reflecting members or the like on the interface betweenthe first members 51 and the second members 52 (the light reflectingportion 73). In addition, the light from each light emitting device 10can be prevented from being totally reflected by the first members 51.That is, since the light emitting device 10 and the first members 51 arein direct contact with each other, specifically, since the secondelectrode 22 and the first members 51 are in contact with each other,light from each light emitting device 10 can be prevented from beingtotally reflected by the first members 51 and the light from each lightemitting device 10 can be emitted to the outside without a drastic loss.

The organic EL light emitting apparatus according to Example 6 can bemanufactured by the same manufacturing method as the method ofmanufacturing the organic EL light emitting apparatus described inExample 1 (except for forming the light reflecting films 71, however).

Otherwise, the organic EL light emitting apparatus can be manufacturedbased on each step of:

preparing a stamper having a shape complementary to the first members51;

applying a resin material on a supporting substrate;

obtaining a resin material layer having convex portions by removing thestamper after shaping the resin material by using the stamper;

planarizing the convex portions on a top portion of the resin materiallayer, and then embedding portions between the convex portions of theresin material layer with an adhesive agent layer; and

removing the resin material layer from the supporting substrate,attaching the adhesive agent layer to the first substrate 11, andobtaining the second members 52 (including the light absorbing layers54) made with the adhesive agent layer and the first members 51 madewith the resin material layer. In this manner, the organic EL lightemitting apparatus in which the light extraction efficiency of lightfrom the light emitting device 10 to the outside can be furtherincreased can be manufactured with a simple manufacturing method byobtaining the first members 51 made with the resin material layer andthe second members 52 (including the light absorbing layers 54) madewith the adhesive agent layer by using the stamper.

Hereinafter, such a manufacturing method, more specifically, a method ofmanufacturing the light reflecting layer 50, is described with referenceto FIGS. 18A, 18B, 18C, and 18D.

Step 600

First, a stamper having a shape complementary to the first members 51 isprepared. In particular, a stamper (female mold) 60 having a shapecomplementary to the first members 51 is formed by using techniquesaccording to the related art such as electroforming, etching, and othercutting processes.

Step 610

Meanwhile, the resin material is applied on a supporting substrate.Specifically, for example, an ultraviolet ray curable resin material 62is applied (formed) on a supporting substrate 61 made with a glasssubstrate having optical transparency (see FIG. 18A).

Step 620

Subsequently, after shaping the resin material 62 by using the stamper60, the stamper 60 is removed, so that a resin material layer 63 havingconvex portions 64 is obtained. Specifically, in a state in which thestamper 60 is pressed against the resin material 62, the resin material62 is cured by radiating an energy ray (specifically, an ultravioletray) from the supporting substrate 61 side, and the resin material layer63 is obtained (see FIG. 18B). Then the stamper 60 is removed. In thismanner, the resin material layer 63 having the convex portions 64 can beobtained (see FIG. 18C). The convex portions 64 of the resin materiallayer 63 correspond to the first members 51.

Step 630

Thereafter, the top portion of the convex portions 64 of the resinmaterial layer 63 is planarized, and then portions between the convexportions 64 of the resin material layer 63 are embedded in an adhesiveagent layer 65 (see FIG. 18D). Further, the adhesive agent layer 65 hasa layered structure of layers for forming the second member configuringlayers 53 and layers for forming the light absorbing layers 54.

Step 640

Subsequently, the resin material layer 63 is removed from the supportingsubstrate 61, the resin material layer 63 is stacked on the firstsubstrate 11 in which light emitting devices and the like are formed,that is, the adhesive agent layer 65 is disposed on the second electrode22 so that the adhesive agent layer 65 does not prevent light from beingemitted from the light emitting device 10, and the resin material layer63 is attached through the adhesive agent layer 65. Further, subsequentto Steps 100 to 120, the first substrate 11 can be obtained by formingthe organic layer 23 and forming the second electrode 22 on the firstelectrodes 21 and the upper interlayer insulating layer 16B in the samemanner as in Steps 140 to 150. In this manner, it is possible to obtainthe light reflecting layer 50 that is configured with the second members52 that are formed with the adhesive agent layer 65 and include thelight absorbing layers 54 and the first members 51 formed with the resinmaterial layer 63.

Step 650

Thereafter, the insulating protecting film 31 is formed on the lightreflecting layer 50 based on a plasma CVD method. Then, the secondsubstrate 34 in which the color filter 33 is formed and the firstsubstrate 11 in which the protecting film 31 is formed are attachedusing the sealing material layer 32. Finally, the organic EL lightemitting apparatus can be completed by connecting the result to anexternal circuit. Further, thermosetting resin material or thermoplasticresin can be used instead of the ultraviolet ray curable resin material62.

The first members 51 have truncated cone shapes (or a truncated rotatingbody shape) and can be configured so that the values described below areas presented in Table 5, and satisfy

0.5≤R ₁ /R ₂≤0.8 and

0.5≤H/R ₁≤2.0,

when the diameter of a light incident surface (a surface that faces thefirst substrate 11 in Example 6) is R₁, the diameter of a light emittingsurface (a surface that faces the second substrate 34 in Example 6) isR₂, and a height is H. Further, the inclined planes of the truncatedcone shapes are linear. That is, the cross-sectional shape of the firstmember 51 when the first members 51 are cut through a virtual planeincluding axis lines of the first members 51 is a trapezoid.

TABLE 5 Comparative Example Example 6 6A 6B 6B R₁ μm 2.3 2.3 5.5 Notformed R₂ μm 3.8 3.8 9.4 R₁/R₂ 0.61 0.61 0.59 H μm 1.5 1.5 5.0Inclination angle θ Degree 63 63 64 Opening ratio — 0.385 — — Diameterof light μm — 2.0 5.5 5.5 emitting unit R₀ Light emitting unit μm — 4.2410 10   forming pitch Thickness of μm 3.0 3.0 3.0 Not formed protectingfilm Thickness of sealing μm — 2.0 10.0 material layer Thickness ofadhesive μm Not formed 3.5 layer Thickness of color μm — 2.0 2.0 2.0filter

Otherwise, in the modification example (Example 6A) of the organic ELlight emitting apparatus according to Example 6, R₁, R₂, H, inclinationangles θ of inclined planes of truncated cone-shaped first members,thicknesses of the protecting film 31, thicknesses of the sealingmaterial layer 32, thicknesses of the color filter 33, diameters R₀ ofthe light emitting unit 24 (specifically, the diameter of the firstelectrodes 21), distances from the center of the light emitting unit 24to the center of the neighboring light emitting unit 24 (light emittingunit forming pitch), and opening ratios in the organic EL light emittingapparatus having the configurations and structures of Example 6 are setas presented in Table 5. The organic EL light emitting apparatusaccording to Example 6A is, for example, a high resolution lightemitting apparatus preferably applied to an electrical viewfinder (EVF)or a head mounted display (HMD). Further, an organic EL light emittingapparatus having the same configurations and structures as in theorganic EL light emitting apparatus according to Example 6A except forproviding an SiO₂ layer instead of the light reflecting layer 50 is setto be Comparative Example 6A.

Subsequently, radiation angle distribution of brightness in the organicEL light emitting apparatus according to Example 6A and ComparativeExample 6A, is simulated. As a result, when a radiation angle is withina range of ±10°, the organic EL light emitting apparatus according toExample 6A has a brightness efficiency two times or higher, and adensity of driving current 0.4 times or less than in Comparative Example6A. Further, if it is assumed that the color filter is deviated by 0.3μm in the horizontal direction, the organic EL light emitting apparatusaccording to Example 6A has a brightness efficiency two times or higherand the density of driving current is 0.4 times or less than inComparative Example 6A, and the color mixing ratio of approximately 1%.Further, if the light amount of the light from the center of the lightemitting device 10 is “1”, the light amount of the light emitted fromthe light emitting device 10 to the outside through the first members 51and the second substrate 34 is “1.6” in the organic EL light emittingapparatus according to Example 6A.

Otherwise, the organic EL light emitting apparatus according to Example6B is a television receiver. The size of one sub-pixel according toExample 6B is larger than the size of one sub-pixel according to Example6. Accordingly, if one sub-pixel is configured with one light emittingdevice 10, a thickness of the light reflecting layer 50 necessarilybecomes large. Therefore, in Example 6B, a plurality of (specifically,64) light emitting devices 10 are collected to configure one sub-pixel.Further, the size of one light emitting device 10 is, for example, 10μm×10 μm, and

0.5≤R ₁ /R ₂≤0.8 and

0.5≤H/R ₁≤2.0

are satisfied. The inclined plane of the truncated cone shape is linear.Further, as illustrated in FIG. 14, the array of the sub-pixels is astripe array. Further, in order to simplify the drawings, FIG. 14 isillustrated so that one sub-pixel is configured with an aggregation ofthree light emitting devices 10.

In the organic EL light emitting apparatus of Example 6B, R₁, R₂, H, theinclination angle θ of the inclined plane of the truncated cone-shapedfirst member, the thickness of the protecting film 31, the thickness ofthe sealing material layer 32, the thickness of the color filter 33, thediameter R₀ of the light emitting unit 24 (specifically, the diameter ofthe first electrode 21), and the like in the organic EL light emittingapparatus having basically the same configurations and structures as inExample 6 are set, as presented in Table 5. In the organic EL lightemitting apparatus of Example 3, the second electrode 22 and the firstmembers 51 are directly in contact with each other. Further, an organicEL light emitting apparatus having the same configurations andstructures as in the organic EL light emitting apparatus according toExample 6B except that an SiO₂ layer is provided instead of the lightreflecting layer 50, and adhesive layers are provided instead of theprotecting film 31 and the sealing material layer 32 is set to beComparative Example 6B.

Subsequently, an organic EL light emitting apparatus according toExample 6B and an organic EL light emitting apparatus according toComparative Example 6B are simulated to obtain front surface brightness,light extraction efficiency, and brightness ratios to the front surfacebrightness at a viewing angle of 45° and a viewing angle of 60°. As aresult, in Example 6B, the front surface brightness and the lightextraction efficiency are increased to be two times or greater than inComparative Example 6B. Further, radiation angle distribution ofbrightness in Example 6B and Comparative Example 6B is simulated. Whenbrightness at a viewing angle of 0° according to Comparative Example 6Bis set to be “1”, the brightness ratio of a viewing angle of 45° tofront surface brightness is 0.87, the brightness ratio of a viewingangle of 60° to front surface brightness is 0.79, and these areextremely high values.

Since the second electrode 22 and the first members 51 are directly incontact with each other in the organic EL light emitting apparatusaccording to Example 6B, light emitted from the light emitting device 10is not drastically lost and particularly excellent characteristics canbe obtained. Further, the organic EL light emitting apparatus accordingto Example 6B has not only a higher value of the front surfacebrightness but also a higher relative value of brightness at a highviewing angle than that of the organic EL light emitting apparatusaccording to Comparative Example 6B. That is, it is found that theorganic EL light emitting apparatus according to Example 6B has highbrightness at any angle from which the observer views the organic ELlight emitting apparatus, and the organic EL light emitting apparatusaccording to Example 6B is an organic EL light emitting apparatus whichis preferable as an organic EL light emitting apparatus for a televisionreceiver.

Example 7

Example 7 is a modification of Example 6. In Example 6, the top surfaceof the first members 51 and the top surface of the second members 52 arepositioned on nearly the same plane. That is, portions between thesecond members 52 are filled with the first members 51. Meanwhile, inExample 7, as FIG. 7 illustrates a schematic partial cross-sectionalview, and the layered first members 51A are formed in the portionsbetween the second members 52. Specifically, the layered first members51A having a refractive index n₁ of 1.806 and an average thickness of0.2 μm are formed on the second electrode 22. Further, a regionsurrounded by the layered first members 51A that are positioned over thefirst electrodes 21 and formed on and over the second members 52 isreferred to as a “region 51B”. Subsequently, the insulating protectingfilm 31 made with silicon nitride (Si_(1-y)N_(y)) is formed on theentire surface, that is, in the region 51B and a region over the topsurface of the second members 52. In addition, the sealing materiallayer 32 and the color filter 33 are formed on the protecting film 31.Further, a portion of the sealing material layer 32 is extended in theregion 51B.

Except for the above, since the organic EL light emitting apparatusaccording to Example 7 has the same configurations and structures as inthe organic EL light emitting apparatus according to Example 6, thedetailed description is omitted.

In Example 7A, the light amount ratio when difference (|n₁−n₃|) betweenthe refractive index n₁ of the layered first members 51A and therefractive index n₃ of the protecting film 31 is set to be constant(=0.2) and the refractive index n₁ of the first members 51A is changedis simulated. Here, the light amount according to Comparative Example 6Bis set to be “1.00”. In addition, the refractive index n₂ of the secondmembers 52 is set to be 1.61. Further, parameters of the lightreflecting layer of the organic EL light emitting apparatus according toExample 7A are the same as the parameters (see Table 5) and the array ofthe sub-pixel of the light reflecting layer of the organic EL lightemitting apparatus according to Example 6B.

As a result of the simulation, it is found that if a difference betweenthe refractive index n₁ of the layered first members 51A and therefractive index n₃ of the protecting film 31 is 0.2, the layered firstmembers 51A can sufficiently perform a function as a light reflectingportion (reflector). In addition, it is found that if the refractiveindex n₁ of the layered first members 51A is higher than the refractiveindex n₃ of the protecting film 31, the light amount ratio is decreased.Further, when a relationship between a viewing angle and a relativevalue of brightness (when brightness at a viewing angle of 0° accordingto Comparative Example 6B is regulated to be “1”) is examined, it isfound that if (n₃−n₁) is less than 0.2, a relative value of brightnessfrom a viewing angle of −90° to a viewing angle of −40° is increased, arelative value of brightness from a viewing angle of approximately −40°to a viewing angle of 0° is decreased, a relative value of brightnessfrom a viewing angle of 0° to a viewing angle of approximately 40° isincreased again, and a relative value of brightness from a viewing angleof approximately 40° to a viewing angle of 90° is decreased again, thatis, it is found that the relative value of brightness has two peaks, andbrightness when the organic EL light emitting apparatus is viewed fromthe front surface is decreased. According to the simulation resultdescribed above, a conclusion in which the value (=n₃−n₁) obtained bysubtracting the refractive index n₁ of the layered first members 51Afrom the refractive index n₃ of the protecting film 31 is preferably 0.2or more is obtained.

In addition, in Example 7B, the light amount ratio when the refractiveindex n₃ of the protecting film 31 is constantly set to be 1.8 and therefractive index n₄ of the sealing material layer 32 extending to theinside of the region 51B is changed is simulated. Here, the refractiveindex n₂ of the second members 52 is set to be 1.61, and the refractiveindex n₁ of the layered first members 51A is set to be 1.806. Inaddition, a relationship between a viewing angle and a relative value ofbrightness (a value obtained by regulating brightness at a viewing angleof 0° to “1”) is examined. The parameters of the light reflecting layerof the organic EL light emitting apparatus according to Example 7B arethe same as the parameters (see Table 5) and the array of the sub-pixelsof the light reflecting layer of the organic EL light emitting apparatusaccording to Example 6B.

As a result of the simulation, it is found that, as the differencebetween the refractive index n₃ of the protecting film 31 and therefractive index n₄ of the sealing material layer 32 is decreased, thelight amount ratio is decreased, and the relative value of brightness ina case of the large value of the viewing angle is increased to begreater than in the case of the viewing angle of 0°. In addition, it isfound that when the refractive index n₃ of the protecting film 31 is setto be 1.8, the refractive index n₄ of the sealing material layer 32 ispreferably 1.5 or more. That is, it is found that |n₃−n₄|≤0.3 ispreferably satisfied.

Further, in Examples 7C and 7D, with respect to the organic EL lightemitting apparatus that has parameters that are the same as parameters(see Table 5) of the light reflecting layer of the organic EL lightemitting apparatus according to Example 6B and the array that is thesame as the array of the sub-pixels of the light reflecting layer of theorganic EL light emitting apparatus according to Example 6B, the lightamount ratio when the value of R₂ is changed is simulated.

As a result of the simulation, it is found that the ratio of the lightamount is increased as the value of R₂/R₁ is increased, but the increaseproportion of the light amount ratio is decreased as the value of R₂/R₁approaches “2.00”. In addition, when a relationship between the viewingangle and the relative value of brightness (a value obtained byregulating the brightness at the viewing angle of 0° according toComparative Example 6B is set to be “1”) is examined, it is found thatif the value of R₂/R₁ is 1.5 or less, as a viewing angle is increasedfrom a viewing angle of −90°, the relative value of brightness isincreased to reach a first maximum value, is decreased, reaches aminimum value at a viewing angle of 0°, is increased, reaches a secondmaximum value, and then is decreased. From the result described above,it is found that the value of R₂/R₁ is preferably 1.6 or more and 2.0 orless.

Example 8

Example 8 is also a modification of Example 6. As FIG. 8 illustrates aschematic partial cross-sectional view of the organic EL light emittingapparatus according to Example 8, a high refractive index region 51Chaving a refractive index n₅ higher than the refractive index n₃ of theprotecting film 31 is provided instead of extending a portion of thesealing material layer 32 to the inside of the region 51B. Most lightthat enters the high refractive index region 51C from the protectingfilm 31 and collides with an inclined plane 51D which is an interfacebetween the protecting film 31 and the high refractive index region 51Creturns to the high refractive index region 51C. As a result, the lightextraction efficiency of the light from the light emitting device to theoutside can be enhanced. Further, for example, it is preferable tosatisfy

n ₅ −n ₃≥0.3.

Except for the above, since the organic EL light emitting apparatusaccording to Example 8 has the same configurations and structures as theorganic EL light emitting apparatus according to Example 6, the detaileddescription is omitted.

Example 9

Though Example 9 is also a modification of Example 6, light from eachlight emitting device 10 according to Example 9 is emitted to theoutside through the first substrate 11. That is, the light emittingapparatus according to Example 9 is a lower surface light emitting-typelight emitting apparatus. FIG. 9 illustrates a schematic partialcross-sectional view of the light emitting apparatus (the organic ELlight emitting apparatus is an active matrix-type color display)according to Example 9. Further, the array of the sub-pixels is asillustrated in FIGS. 13A and 13B.

The first members 51 have truncated cone shapes (or a truncated rotatingbody shape) and are configured to satisfy, for example,

R ₁=2.3 μm

R ₂=3.8 μm,

R ₁ /R ₂=0.61,

H=1.5 μm,

R ₀=2.0 μm,

0.5≤R ₁ /R ₂≤0.8, and

0.5≤H/R ₁≤2.0,

when the diameter of a light incident surface (a surface that faces thesecond substrate 34 in Example 9) is R₁, the diameter of a lightemitting surface (a surface that faces the first substrate 11 in Example9) is R₂, and a height is H. Further, the inclined plane of thetruncated cone shape is linear. That is, the cross-sectional shape ofthe first member 51 when the first members 51 are cut through a virtualplane including axis lines of the first members 51 is a trapezoid.

In Example 9, the second electrode 22 is used as an anode electrode, andthe first electrodes 21 are used as cathode electrodes. The secondelectrode 22 is made with a light reflecting material, specifically, anAl—Nd alloy, and the first electrodes 21 are made with a translucentmaterial, specifically, a conductive material including magnesium (Mg),more specifically, a Mg—Ag alloy with a thickness of 10 nm. The secondelectrode 22 is formed by a film forming method such as a vacuumdeposition method requesting less energy of film forming particles. Inaddition, the first electrodes 21 are formed based on the combination ofthe vacuum deposition method and the etching method. The measurementresult of refractive indexes of the first electrodes 21 and the secondelectrode 22, the measurement result of the average light refractivityof the first electrodes 21, and the measurement result of the averagelight transmittance of the second electrode 22 are as described inExample 1. However, in the measurement values of Example 1, the “firstelectrode 21” is changed to “second electrode 22” and “second electrode22” is changed to “first electrode 21”.

In Example 9, the first electrodes 21 that configure the organic ELdevice are provided in the light reflecting layer 50 formed with thefirst members 51 and the second members 52. Then, the light reflectinglayer 50 covers an organic EL device driving unit (not illustrated)formed on the first substrate 11. The organic EL device driving unit isconfigured with a plurality of TFTs, and the TFTs and the firstelectrodes 21 are electrically connected to each other through contactplugs and wires (not illustrated) provided in the second members 52. Insome cases, an organic EL device driving unit may be provided in theupper portion of the light emitting unit 24.

In Example 9, the protecting film 31 and the sealing material layer 32are further included on the light emitting unit 24 in the same manner asin Example 1. In addition, the light emitting unit 24 is surrounded byan insulating layer 26.

Radiation angle distribution of brightness of the organic EL lightemitting apparatus according to Example 9A and the organic EL lightemitting apparatus according to Comparative Example 9A is simulated. Theorganic EL light emitting apparatus according to Example 9A is obtainedfrom organic EL light emitting apparatus having configurations andstructures of Example 9, by performing setting in which

R ₁=2.3 μm

R ₂=3.8 μm

H=1.5 μm

the inclination angle of the inclined plane of the truncated cone-shapedfirst member is 63°, the thickness of the protecting film 31 is 3.0 μm,the thickness of the sealing material layer 32 is 10 μm, the thicknessof the color filter 33 is 2.0 μm, and the diameter of the light emittingunit 24 (specifically, the diameter of the first electrodes 21) is 2.0μm, and the organic EL light emitting apparatus according to ComparativeExample 9A is obtained to have the same configurations and structures asin the organic EL light emitting apparatus according to Example 9Aexcept for providing an SiO₂ layer instead of the light reflecting layer50. As a result, if the radiation angle is within the range of ±10°, thebrightness efficiency of the organic EL light emitting apparatusaccording to Example 9A is 2.2 times that of Comparative Example 9A. Inaddition, the density of driving current is 0.4 times that ofComparative Example 9A. In addition, if it is assumed that the colorfilter is deviated by 0.3 μm in the horizontal direction in the organicEL light emitting apparatus according to Example 9A, the brightnessefficiency is 2.3 times that of Comparative Example 9A, the density ofdriving current is 0.5 times that of Comparative Example 9A, and thecolor mixing ratio is 1.3%.

Also in the organic EL light emitting apparatus according to Example 9,the refractive index n₁ of the first members 51 and a difference betweenthe refractive index n₁ of the first members 51 and the averagerefractive index n_(2-ave) of the second members 52 are regulated.Therefore, even if the light reflecting member or the like is notprovided in the surface of the second members 52 that faces the firstmembers 51 (that is, the interface between the first members 51 and thesecond members 52), that is, on the light reflecting portion 73, atleast a portion of the light diffused in the first members 51 can bereliably reflected, and the light from each light emitting device 10 canbe reliably prevented from being totally reflected by the first members51. Further, the configurations of the organic EL light emittingapparatus according to Example 9 can be applied to the organic EL lightemitting apparatus according to Example 6B to use the organic EL lightemitting apparatus as a television receiver and in this case, theplurality of light emitting devices 10 may be collected to configure onesub-pixel similarly to Example 6B.

In addition, the light reflecting films 71 and 72 described in Examples1 to 5 may be applied to the lower surface light emitting-type lightemitting apparatus according to Example 9.

Example 10

Example 10 is also a modification of Examples 1 to 4, and relates to theorganic EL light emitting apparatus according to the fourth embodimentof the present disclosure. As FIG. 10 illustrates a schematic partialcross-sectional view, in the organic EL light emitting apparatusaccording to Example 10 of the present disclosure, a light reflectingmember (light reflecting film) 74 that reflects a portion of light thatis emitted from the light emitting device 10, passes through the firstmembers 51, and enters the second substrate 35 from a first surface 35Aof a second substrate 35, and that emits the light from a second surface35B of the second substrate 35 is formed on the second substrate 35.Here, the second substrate 35 is fixed in the upper portion of thesecond electrode 22, the first surface 35A faces the second electrode22, and the second surface 35B faces the first surface 35A.

More specifically, the light reflecting member (light reflecting film)74 that reflects a portion of the light, being emitted from the lightemitting layer 23A through the second electrode 22, and entering thesecond substrate 35, and that emits the light from the second surface35B of the second substrate 35 is formed to extend from the firstsurface 35A of the second substrate 35 to the inside. As FIG. 11illustrates a schematic plot plan view, the array of the plurality oflight emitting devices 10 is a stripe array, and the plurality of lightreflecting members 74 are provided for one light emitting device 10.

Though it depends on configuring materials, the second substrateprovided with a light reflecting member can be manufactured, forexample, by a method of forming concave portions on a first surfaceusing a stamper or forming concave portions on a first surface based ona cutting process, forming a light reflecting member on a surfaceexposed to the concave portions, and then embedding the concaveportions.

That is, as illustrated in FIG. 10, the light reflecting member 74 canbe manufactured, for example, by a method of forming concave portions 41on the first surface 35A of the second substrate 35 by a cuttingprocess, forming the light reflecting member 74, for example, based on avacuum deposition method on a surface exposed to the concave portions41, and embedding the concave portions 41 with a filling material 42made with, for example, an acrylic resin. Further, instead of using thefilling material 42, the adhesive layer 32 may be used to embed theconcave portions 41 together with bonding the second substrate 35.

Hereinafter, another method of manufacturing, for example, the secondsubstrate 35 having the light reflecting member (light reflecting film)74 is described with reference to FIGS. 19A, 19B, 19C, and 19D.Specifically, first, a stamper (female mold) 66 having a shapecomplementary to the light reflecting member 74 is formed by using atechnique according to the related art such as electroforming, etching,and other cutting processes. Then, for example, an ultraviolet raycurable resin composition 68 is applied on a supporting substrate 67made with a glass substrate having optical transparency (see FIG. 19A),and the resin composition 68 is shaped using the stamper 66.Specifically, after a resin composition cured material 68A is obtainedby radiating an ultraviolet ray in a state in which the stamper 66 ispressed against the resin composition 68 (see FIG. 19B), the stamper 66is removed, and then unevenness portions having a shape of the lightreflecting member can be formed on the surface of the resin compositioncured material 68A. Thereafter, a metal reflecting layer (or amulti-layered thin film) 74′ made with metal with high lightreflectivity such as Al or Ag is formed on the surface of the resincomposition cured material 68A, for example, by a vacuum depositionmethod (see FIG. 19C). Subsequently, a portion (convex portion) of theresin composition cured material 68A on which the metal reflecting layer74′ is stacked is cut and removed, for example, by a lapping process(see FIG. 19D). Thereafter, the concave portions 41 are embedded withthe filling material 42 so that the second substrate 35 having the lightreflecting member 74 can be obtained.

In the above, the present disclosure has been described based onpreferred examples, but the present disclosure is not limited to theexamples. The configurations and structures of the organic EL lightemitting apparatus or the organic EL devices, and the materials thatconfigure the organic EL light emitting apparatus or the organic ELdevices according to the examples are presented as examples, and can beappropriately modified.

Further, the present disclosure can have the following configurations.

[A01]<Light Emitting Apparatus>

A light emitting apparatus including:

(A) a first substrate that includes a plurality of light emittingdevices each obtained by stacking a first electrode, a light emittingunit configured with an organic layer including a light emitting layer,and a second electrode; and

(B) a second substrate that faces the first substrate,

in which the first substrate includes

a first member that diffuses light from each light emitting device andemits the light to the outside, and

a second member that occupies portions between the first members, and alight absorbing layer is provided in the second member.

[A02] The light emitting apparatus according to [A01], in which at leasta portion of light diffused in the first member is reflected on aninterface between the first member and the second member.

[A03] The light emitting apparatus according to [A01], in which a lightreflecting film is formed on the interface between the first member andthe second member.

[A04] The light emitting apparatus according to [A01], in which

1.1≤n ₁≤1.8 and

n ₁ −n _(2-ave)≥0.2

are satisfied, when a refractive index of a material configuring thefirst member is n₁, and an average refractive index of a materialconfiguring the second member that includes the light absorbing layer isn_(2-ave).

[A05] The light emitting apparatus according to [A04], in which thefirst member is made with Si_(1-x)N_(x), ITO, IZO, TiO₂, Nb₂O₅, abromine-containing polymer, a sulfur-containing polymer, atitanium-containing polymer, or a zirconium-containing polymer, and thesecond member except for the light absorbing layer is made with SiO₂,MgF, LiF, a polyimide resin, an acrylic resin, a fluorine-based resin, asilicone resin, a fluorine-based polymer, or a silicone-based polymer.

[A06] The light emitting apparatus according to [A01], in which thelight reflecting member that reflects at least a portion of light beingemitted from the light emitting device, passing through the firstmember, and entering the second substrate from the first surface of thesecond substrate, and that emits the light from the second surface ofthe second substrate is formed on the second substrate.

[A07] The light emitting apparatus according to any one of [A01] to[A06], further including a protecting film and a sealing material layeron the first member and the second member,

in which

|n ₃ −n ₄|≤0.3

is satisfied, when a refractive index of a material configuring theprotecting film is n₃, and a refractive index of a material configuringthe sealing material layer is n₄.

[A08] The light emitting apparatus according to [A07], in which when alight amount of light from a center portion of the light emitting deviceis set to be 1, a light amount of light emitted from the light emittingdevice to the outside through the first member and the second substrateranges from 1.5 to 2.0.

[A09] The light emitting apparatus according to any one of [A01] to[A08], in which the light absorbing layer is provided in a lower portionof the second member.

[A10] The light emitting apparatus according to any one of [A01] to[A08], in which the light absorbing layer is provided in a middleportion of the second member.

[A11] The light emitting apparatus according to any one of [A01] to[A08], in which the light absorbing layer is provided in a top portionof the second member.

[A12] The light emitting apparatus according to any one of [A01] to[A08], in which the light absorbing layer occupies an entire portion ofthe second member.

[A13] The light emitting apparatus according to any one of [A01] to[A12], further including a color filter.

[A14] The light emitting apparatus according to any one of [A01] to[A13], in which the light emitting device and the first member are incontact with each other.

[A15] The light emitting apparatus according to any one of [A01] to[A14], in which light from each light emitting device is emitted to theoutside through the second substrate.

[A16] The light emitting apparatus according to any one of [A01] to[A15], in which one pixel is configured with one light emitting device.

[A17] The light emitting apparatus according to [A16], in which thefirst member has a truncated cone shape, and

0.5≤R ₁ /R ₂≤0.8 and

0.5≤H/R ₁≤2.0

are satisfied, when a diameter of the light incident surface is R₁, adiameter of the light emitting surface is R₂, and a height is H.

[A18] The light emitting apparatus according to any one of [A01] to[A15], in which a plurality of light emitting devices are collected toconfigure one pixel.

[A19] The light emitting apparatus according to [A18], in which thefirst member has a truncated cone shape, and

0.5≤R ₁ /R ₂≤0.8 and

0.5≤H/R ₁≤2.0

are satisfied, when a diameter of the light incident surface is R₁, adiameter of the light emitting surface is R₂, and a height is H.

[B01]<Light Emitting Apparatus>

A light emitting apparatus including:

a substrate including a plurality of light emitting devices, wherein thesubstrate further includes a plurality of first members configured todiffuse light emitted from at least one of the light emitting devices,and a second member that is positioned between the first members, andwherein the second member includes a light absorbing layer.

[B02] The light emitting apparatus according to [B01],

wherein at least a portion of light diffused in at least one of thefirst members is reflected on an interface between the first members andthe second member.

[B03] The light emitting apparatus according to [B01],

wherein a light reflecting film is formed on an interface between atleast one of the first members and the second member.

[B04] The light emitting apparatus according to [B01],

wherein at least one of the first members includes a first materialhaving a refractive index (n₁), wherein the second member includes asecond material having an average refractive index (n_(2-ave)), andwherein 1.1≤n₁≤1.8 and n₁−n_(2-ave)≤0.2.

[B05] The light emitting apparatus according to [B01], further includinga light reflecting member that reflects at least a portion of lightbeing emitted from the light emitting device, and passing through thefirst member.

[B06] The light emitting apparatus according to [B01], furthercomprising: a protecting film and a sealing material layer on the firstmembers and the second member, wherein the protecting film includes aprotecting film material having a refractive index (n₃), wherein thesealing material layer includes a sealing material having a refractiveindex (n₄), and wherein |n₃−n₄|≤0.3.

[B07] The light emitting apparatus according to [B01], wherein the lightabsorbing layer is provided in a lower portion of the second member.

[B08] The light emitting apparatus according to [B01], wherein the lightabsorbing layer is provided in a middle portion of the second member.

[B09] The light emitting apparatus according to [B01], wherein the lightabsorbing layer is provided in a top portion of the second member.

[B10] The light emitting apparatus according to [B01], wherein the lightabsorbing layer occupies an entire portion of the second member.

[B11] The light emitting apparatus according to [B01], furthercomprising a color filter.

[B12] The light emitting apparatus according to [B01], wherein the lightemitting devices and the first members are in contact with each other.

[B13] The light emitting apparatus according to [B01], wherein lightfrom the light emitting devices is emitted outside the light emittingapparatus through the substrate.

[B14] The light emitting apparatus according to [B01], wherein the lightemitting devices include a first electrode, a second electrode, and alight emitting unit having an organic layer, and wherein the organiclayer includes a light emitting layer.

[B15] The light emitting apparatus according to [B01], wherein thesubstrate includes a first substrate including the light emittingdevices, the first member, and the second member; and a second substratefacing the first substrate.

[B16] The light emitting apparatus according to [B01], wherein the lightabsorbing layer is in proximity of an outside portion of the secondmember.

[C01] An electronic apparatus comprising a light emitting apparatusincluding a substrate, the substrate including a plurality of lightemitting devices, wherein the substrate further includes a plurality offirst members and a second member positioned between the first members,wherein the first members are configured to diffuse and emit light, andwherein the second member includes a light absorbing layer.

[C02] The electronic apparatus according to [C01], wherein theelectronic apparatus includes a mobile device.

[C03] The electronic apparatus according to [C02], wherein the mobiledevice is a tablet or a smartphone.

It should be understood by those skilled in the art that the term“substrate” as used herein includes one or more than one substrate, suchas a first substrate and a second substrate, and as described in thepresent disclosure.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

It should be understood that various changes and modifications to thepresently preferred embodiments described herein will be apparent tothose skilled in the art. Such changes and modifications can be madewithout departing from the spirit and scope of the present subjectmatter and without diminishing its intended advantages. It is thereforeintended that such changes and modifications be covered by the appendedclaims.

The invention is claimed as follows:
 1. A display device comprising: asubstrate including a plurality of driving transistors; a first sectionprovided on the substrate, wherein the first section includes a firstinsulating layer, a second insulating layer and a light absorbingportion; a second section provided on the first section, wherein thesecond section includes a third insulating layer and a light emittingelement including a first electrode, an organic layer provided on thefirst electrode and a second electrode provided on the organic layer;wherein the second insulating layer is in contact with the lightabsorbing portion, wherein the light absorbing portion and the thirdinsulating layer are partially overlapped in a cross sectional view, andwherein a top surface of the second insulating layer includes a planersurface, and wherein the first electrode includes a transparentconductive material, and wherein the second electrode includes areflective material, and wherein light generated in the organic layer isextracted from the first electrode.
 2. The display device according toclaim 1, wherein the first insulating layer includes SiO₂.
 3. Thedisplay device according to claim 1, wherein the first insulating layerincludes a material different from the third insulating layer.
 4. Thedisplay device according to claim 1, wherein the first insulating layerincludes SiO₂ and the third insulating layer includes an organic resin.5. The display device according to claim 1, wherein the light absorbingportion includes a non-luminance region.
 6. The display device accordingto claim 1, wherein the light absorbing portion includes a single layer.7. The display device according to claim 1, wherein an absorptivity ofvisible light of the light absorbing portion is 90% or more.
 8. Thedisplay device according to claim 1, wherein an absorptivity of visiblelight of the light absorbing portion is 99% or more.
 9. The displaydevice according to claim 1, wherein the light absorbing portionincludes carbon, a metal film including one or more chromium, nickel,aluminum, molybdenum, or an alloy thereof, a metallic oxide, a metalnitride, an organic resin, a glass paste including a black pigment, anda resin including a black dye or a black pigment.
 10. The display deviceaccording to claim 1, wherein the third insulating layer includes atleast an organic resin.
 11. The display device according to claim 1,wherein the second insulating layer is disposed between the substrateand the light emitting element.
 12. The display device according toclaim 1, wherein the second insulating layer includes at least anorganic resin.
 13. The display device according to claim 1, wherein arefractive index of the third insulating layer is different from that ofthe first insulating layer.
 14. The display device according to claim 1,further comprising a light reflecting portion, wherein the lightreflecting portion is an interface between the second insulating layerand the first insulating layer.
 15. The display device according toclaim 1, wherein the driving transistor includes a thin film transistor.16. A display device comprising: a substrate including a plurality ofdriving transistors; a first section provided on the substrate, whereinthe first section includes a first insulating layer, a second insulatinglayer and a plurality of light absorbing portions; a second sectionprovided on the first section, wherein the second section includes aplurality of third insulating layers and a plurality of light emittingelements, and the light emitting elements each include a firstelectrode, an organic layer provided on the first electrode and a secondelectrode provided on the organic layer; wherein the second insulatinglayer is in contact with at least one of the light absorbing portions,wherein at least one of the light absorbing portions are partiallyoverlapped with at least one of the third insulating layers in a crosssectional view, wherein a top surface of the second insulating layerincludes a planer surface, and wherein the first electrode includes atransparent conductive material and the second electrode includes areflective material, and light generated in the organic layer isextracted from the first electrode.
 17. The display device according toclaim 16, wherein the first insulating layer and the third insulatinglayers each include a plurality of insulating layers.
 18. The displaydevice according to claim 16, wherein the first insulating layerincludes a material different from the second insulating layer.
 19. Thedisplay device according to claim 16, wherein the first insulating layerincludes SiO₂ and the second insulating layer includes an organic resin.20. The display device according to claim 16, wherein the lightabsorbing portions include a non-luminance region.